Title:
SEMICONDUCTOR THIN-FILM STRUCTURE AND ELECTRONIC ELEMENT INCLUDING THE SAME
Document Type and Number:
Japanese Patent JP2021068889
Kind Code:
A
Abstract:
To provide a semiconductor thin-film structure, and an electronic element including the same.SOLUTION: In a semiconductor thin-film structure, a unit layer including a first layer with a first bandgap energy and first thickness, a second layer with a second bandgap energy and second thickness, and a third layer with a third bandgap energy and third thickness is repeatedly stacked a plurality of times. In the unit layer, one of the first layer, the second layer, and the third layer with the lowest bandgap energy includes a buffer layer disposed between the other two layers and a semiconductor layer formed on the buffer layer. Thus, by using the buffer layer, a semiconductor layer formed on a heterogeneous substrate has high thin-film quality.SELECTED DRAWING: Figure 1B
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Inventors:
PARK YOUNG-HWAN
KIM JONGSEOB
KIM JOON-YONG
PARK JUNHYUK
SHIN DONGCHUL
OH JAE-JOON
CHONG SOOGINE
HWANG SUN KYU
WHANG IN-JUN
KIM JONGSEOB
KIM JOON-YONG
PARK JUNHYUK
SHIN DONGCHUL
OH JAE-JOON
CHONG SOOGINE
HWANG SUN KYU
WHANG IN-JUN
Application Number:
JP2020167689A
Publication Date:
April 30, 2021
Filing Date:
October 02, 2020
Export Citation:
Assignee:
SAMSUNG ELECTRONICS CO LTD
International Classes:
H01L29/778; H01L21/338; H01L29/812; H01L33/32
Attorney, Agent or Firm:
Tatsuhiko Abe
Shinya Mitsuhiro
Choi
Shinya Mitsuhiro
Choi