Title:
DOPED TIN OXIDE THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2020/101164
Kind Code:
A1
Abstract:
The present invention provides a thin film transistor including a SnO2:Al (aluminum doped tin oxide) channel layer doped with an aluminum doping layer at a specific position of a tin dioxide layer, and a method for manufacturing same, such that charge mobility and on/off current ratio characteristics suitable for use as a channel layer can be achieved.
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Inventors:
JEON HYEONGTAG (KR)
PARK HYUNWOO (KR)
JUNG SOON SHIN (KR)
MOON JEONG MIN (KR)
CHOI SU SEOK (KR)
RYU SUNGPIL (KR)
JUNG JIHWAN (KR)
CHANG KISEOK (KR)
PARK HYUNWOO (KR)
JUNG SOON SHIN (KR)
MOON JEONG MIN (KR)
CHOI SU SEOK (KR)
RYU SUNGPIL (KR)
JUNG JIHWAN (KR)
CHANG KISEOK (KR)
Application Number:
PCT/KR2019/011723
Publication Date:
May 22, 2020
Filing Date:
September 10, 2019
Export Citation:
Assignee:
LG DISPLAY CO LTD (KR)
UNIV HANYANG IND UNIV COOP FOUND (KR)
UNIV HANYANG IND UNIV COOP FOUND (KR)
International Classes:
H01L29/786; H01L21/02; H01L21/324; H01L29/66
Foreign References:
| KR20100115220A | 2010-10-27 | |||
| JP2018022879A | 2018-02-08 |
Other References:
CHEN, PO-CHUN ET AL.: "Performance Enhancements in p-Type Al-Doped Tin-Oxide Thin Film Transistors by Using Fluorine Plasma Treatment", IEEE ELECTION DEVICE LETTERS, vol. 38, no. 2, 29 December 2016 (2016-12-29) - February 2017 (2017-02-01), pages 1 - 2, XP055707235
PAKIYARAJ, K.: "Annealing Effect on Al doped SnO2 Nano structure Thin Films Prepared by Spray Pyrolysis Technique", JOURNAL OF NANOSCIENCE AND TECBNOLOGY(JACS, vol. 4, no. 1, March 2018 (2018-03-01), pages 317 - 319, XP055707236
BANERJEE, PARAG ET AL.: "Structural, electrical, and optical properties of atomic layer deposition Al doped ZnO films", JOURNAL OF APPLIED PHYSICS (AIP, vol. 108, no. 4, 17 August 2010 (2010-08-17), XP012142617, Retrieved from the Internet [retrieved on 20191129], DOI: 10.1063/1.3466987
PAKIYARAJ, K.: "Annealing Effect on Al doped SnO2 Nano structure Thin Films Prepared by Spray Pyrolysis Technique", JOURNAL OF NANOSCIENCE AND TECBNOLOGY(JACS, vol. 4, no. 1, March 2018 (2018-03-01), pages 317 - 319, XP055707236
BANERJEE, PARAG ET AL.: "Structural, electrical, and optical properties of atomic layer deposition Al doped ZnO films", JOURNAL OF APPLIED PHYSICS (AIP, vol. 108, no. 4, 17 August 2010 (2010-08-17), XP012142617, Retrieved from the Internet
Attorney, Agent or Firm:
DAE-A INTELLECTUAL PROPERTY CONSULTING (KR)
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