DOUBLE-GATE ELECTRODE OXIDE THIN-FILM TRANSISTOR AND PREPARATION METHOD THEREFOR

WIPO Patent Application WO/2017/215109

A1

A double-gate electrode oxide thin-film transistor and a manufacturing method therefor. The thin-film transistor comprises a substrate (1); a bottom gate electrode (31) formed above the substrate (1); a first gate insulating layer (41) formed above the bottom gate electrode (31); a semiconductor layer (5) formed above the first gate insulating layer (41); a second gate insulating layer (42) formed above the semiconductor layer (5); and a top gate electrode (32) formed above the second gate insulating layer (42). The double-gate electrode oxide thin-film transistor further comprises a data line (2), wherein the data line (2) and the bottom gate electrode (31) or the data line (2) and the top gate electrode (32) are located on the same metal layer. In the method for preparing a thin-film transistor, the same metal layer is shared by a data line and a bottom gate (or top gate) electrode; and patterning processing is achieved by means of one instance of photolithography, thereby reducing the use amount of photomasks and reducing the production cost. In addition, since the finally manufactured thin-film transistor is of a double-gate electrode structure, the stability of the thin-film transistor can be strengthened, and the response speed thereof can be improved.

JP7105332	Semiconductor device
JP2008191517	ELECTROOPTICAL DEVICE, SUBSTRATE FOR SAME, AND ELECTRONIC EQUIPMENT
JP4401647	Manufacturing method of semiconductor device

XIE YINGTAO (CN)

PCT/CN2016/095421

December 21, 2017

August 16, 2016

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WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO LTD (CN)

H01L29/786; H01L21/336

CN103296090A	2013-09-11
JP2003101029A	2003-04-04

MING & YUE INTELLECTUAL PROPERTY LAW FIRM (CN)

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