Title:
DOUBLE-LAYER SHEET TRANSFER CAVITY
Document Type and Number:
WIPO Patent Application WO/2015/158203
Kind Code:
A1
Abstract:
A double-layer sheet transfer cavity. To mainly solve a problem in prior art that overall device maintenance becomes complex and device use costs are increased in order to implement a function of sheet transfer in up and down layers, independent sheet transfer combined cavities capable of implementing double-layer multiple chambers are designed. An upper-layer cavity (1) and a lower-layer cavity (3) in the double-layer multiple chambers are independently sealed chambers. The cavity at each layer can independently perform a sheet transfer operation, and does not affect each other. Two chambers communicating with each other are arranged inside the cavity at each layer. The chambers can also independently perform wafer sheet transfer and obtaining operations, and do not affect each other's operations. The double-layer sheet transfer cavity has characteristics of a proper structure, relative simple overall device maintenance and reduced device use costs, and can be widely applied in the technical field of semiconductor film deposition application and preparation.
Inventors:
WU FENGLI (CN)
JING WEI (CN)
FANG SHICAI (CN)
JING WEI (CN)
FANG SHICAI (CN)
Application Number:
PCT/CN2015/075244
Publication Date:
October 22, 2015
Filing Date:
March 27, 2015
Export Citation:
Assignee:
SHENYANG PIOTECH CO LTD (CN)
International Classes:
C23C16/44; H01L21/677
Foreign References:
| CN103928378A | 2014-07-16 | |||
| CN101335187A | 2008-12-31 | |||
| CN102064124A | 2011-05-18 | |||
| CN202898519U | 2013-04-24 |
Attorney, Agent or Firm:
SHENYAGN WEITE PATENT AND TRADEMARK AGENCY (GENERAL PARTNERSHIP) (CN)
沈阳维特专利商标事务所（普通合伙） (CN)
沈阳维特专利商标事务所（普通合伙） (CN)
Download PDF: