Title:
DRIVE CIRCUIT FOR POWER SEMICONDUCTOR ELEMENT
Document Type and Number:
WIPO Patent Application WO/2019/021590
Kind Code:
A1
Abstract:
This drive circuit (100) for a power semiconductor element is provided with: a control command unit (102) which outputs a turn-on command for the power semiconductor element (101); a gate voltage detection unit (103) which detects gate voltage applied to a gate terminal (101g) after the control command unit (102) has outputted the turn-on command; a differentiator (104) which temporally differentiates the gate voltage detected by the gate voltage detection unit (103); and a determination unit (110) which, on the basis of the gate voltage detected by the gate voltage detection unit (103) and a differential value obtained by the differentiator (104), determines whether the power semiconductor element (101) is in a short-circuited state or not.
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Inventors:
MUKUNOKI YASUSHIGE (JP)
MASUHARA TAKASHI (JP)
HORIGUCHI TAKESHI (JP)
MASUHARA TAKASHI (JP)
HORIGUCHI TAKESHI (JP)
Application Number:
PCT/JP2018/019024
Publication Date:
January 31, 2019
Filing Date:
May 17, 2018
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H03K17/08; H02M1/08; H03K17/082; H03K17/567; H03K17/687
Domestic Patent References:
| WO2015079492A1 | 2015-06-04 | |||
| WO2014128951A1 | 2014-08-28 |
Foreign References:
| JP2012244365A | 2012-12-10 | |||
| JPH11330935A | 1999-11-30 | |||
| JP2016086588A | 2016-05-19 |
Attorney, Agent or Firm:
FUKAMI PATENT OFFICE, P.C. (JP)
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