Title:
DRIVE CONTROL CIRCUIT FOR POWER SEMICONDUCTOR ELEMENT, POWER SEMICONDUCTOR MODULE, AND POWER CONVERTER
Document Type and Number:
WIPO Patent Application WO/2022/044123
Kind Code:
A1
Abstract:
According to the present invention, a gate current detector (8) detects a gate current flowing between a driver (80) and a control electrode of a power semiconductor element (1). A gate charge amount calculator (9) calculates a gate charge amount supplied to the power semiconductor element (1) on the basis of the detected gate current amount. A short circuit detector (300) detects an arm short circuit or a load short circuit on the basis of the magnitude of the gate current and the magnitude of the gate charge amount. The short circuit detector (300) includes a gate current determination device (101) which compares the magnitude of the gate current with at least one reference value, a gate charge amount determination device (11) which compares the magnitude of the gate charge amount with at least one reference value, and a short-circuit detection logical operation unit (18) which executes a logical operation between the output signal of the gate current determination device (101) and the output signal of the gate charge amount determination device (11).
Inventors:
HORIGUCHI TAKESHI (JP)
MUKUNOKI YASUSHIGE (JP)
MUKUNOKI YASUSHIGE (JP)
Application Number:
PCT/JP2020/032033
Publication Date:
March 03, 2022
Filing Date:
August 25, 2020
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H03K17/0812; H03K17/687; H02H7/20
Domestic Patent References:
| WO2019207847A1 | 2019-10-31 | |||
| WO2007116900A1 | 2007-10-18 |
Foreign References:
| JP2019169825A | 2019-10-03 | |||
| JP2015053749A | 2015-03-19 | |||
| JP2009225506A | 2009-10-01 |
Attorney, Agent or Firm:
FUKAMI PATENT OFFICE, P.C. (JP)
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