Title:
DRIVING CIRCUIT AND DRIVING METHOD THEREFOR, AND MEMORY
Document Type and Number:
WIPO Patent Application WO/2023/216316
Kind Code:
A1
Abstract:
The present invention provides a driving circuit and a driving method therefor, and a memory. The driving circuit comprises a word line driving circuit and a first control circuit; the word line driving circuit comprises an input end, an output end, and at least one N-type transistor; the word line driving circuit is configured to provide an output signal to the output end according to an input signal received by the input end; the first control circuit is configured to reduce the voltage of a substrate end of the at least one N-type transistor in the word line driving circuit under the condition that the input signal is a first control signal, so as to reduce the leakage current of the at least one N-type transistor. The driving circuit can mitigate the electric leakage problem of the N-type transistor in the word line driving circuit, thereby improving the performance of the memory.
Inventors:
ZHANG SHUHAO (CN)
LI NING (CN)
LI NING (CN)
Application Number:
PCT/CN2022/094531
Publication Date:
November 16, 2023
Filing Date:
May 23, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
G11C8/08; G11C11/408; H03K19/20
Foreign References:
| CN103843066A | 2014-06-04 | |||
| CN102214483A | 2011-10-12 | |||
| CN105810247A | 2016-07-27 | |||
| CN208141792U | 2018-11-23 | |||
| CN1339160A | 2002-03-06 | |||
| US20070140037A1 | 2007-06-21 | |||
| US5946229A | 1999-08-31 |
Attorney, Agent or Firm:
LEADER PATENT & TRADEMARK FIRM (CN)
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