Title:
DUAL LAYER CMOS DEVICES
Document Type and Number:
WIPO Patent Application WO2003015160
Kind Code:
A3
Abstract:
A semiconductor-based device includes a channel layer, which includes a distal layer and a proximal layer in contact with the distal layer. The distal layer supports at least a portion of hole conduction for at least one p-channel component, and the proximal layer supports at least a portion of electron conduction for at least one n-channel component. The proximal layer has a thickness that permits a hole wave function to effectively extend from the proximal layer into the distal layer to facilitate hole conduction by the distal layer. A method for fabricating a semiconductor-based device includes providing a distal portion of a channel layer and providing a proximal portion of the channel layer.
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Inventors:
FITZGERALD EUGENE A
Application Number:
PCT/US2002/025286
Publication Date:
December 04, 2003
Filing Date:
August 09, 2002
Export Citation:
Assignee:
AMBERWAVE SYSTEMS CORP (US)
International Classes:
H01L21/8238; H01L29/78; H01L27/092; H01L29/786; (IPC1-7): H01L21/8238; H01L27/092
Foreign References:
| EP0683522A2 | 1995-11-22 | |||
| US5155571A | 1992-10-13 | |||
| US6111267A | 2000-08-29 |
Other References:
YEE-CHIA YEO ET AL: "Enhanced performance in sub-100 nm CMOSFETs using strained epitaxial silicon-germanium", 2000, PISCATAWAY, NJ, USA, IEEE, USA, 10 December 2000 (2000-12-10), pages 753 - 756, XP010531871
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 23 10 February 2001 (2001-02-10)
PATENT ABSTRACTS OF JAPAN vol. 1997, no. 12 25 December 1997 (1997-12-25)
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 23 10 February 2001 (2001-02-10)
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 04 31 August 2000 (2000-08-31)
MIZUNO T ET AL: "ADVANCED SOI-MOSFETS WITH STRAINED-SI CHANNEL FOR HIGH SPEED CMOS -ELECTRON/HOLE MOBILITY ENHANCEMENT-", 2000 SYMPOSIUM ON VLSI TECHNOLOGY. DIGEST OF TECHNICAL PAPERS. HONOLULU, JUNE 13-15, 2000, SYMPOSIUM ON VLSI TECHNOLOGY, NEW YORK, NY: IEEE, US, 13 June 2000 (2000-06-13), pages 210 - 211, XP000970820, ISBN: 0-7803-6306-X
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 23 10 February 2001 (2001-02-10)
PATENT ABSTRACTS OF JAPAN vol. 1997, no. 12 25 December 1997 (1997-12-25)
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 23 10 February 2001 (2001-02-10)
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 04 31 August 2000 (2000-08-31)
MIZUNO T ET AL: "ADVANCED SOI-MOSFETS WITH STRAINED-SI CHANNEL FOR HIGH SPEED CMOS -ELECTRON/HOLE MOBILITY ENHANCEMENT-", 2000 SYMPOSIUM ON VLSI TECHNOLOGY. DIGEST OF TECHNICAL PAPERS. HONOLULU, JUNE 13-15, 2000, SYMPOSIUM ON VLSI TECHNOLOGY, NEW YORK, NY: IEEE, US, 13 June 2000 (2000-06-13), pages 210 - 211, XP000970820, ISBN: 0-7803-6306-X
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