Title:
DYNAMIC MEMORY CELL STRUCTURES
Document Type and Number:
WIPO Patent Application WO2007122083
Kind Code:
B1
Abstract:
A dynamic random access memory cell comprises a capacitive storage device and a write access transistor. The write access transistor is operatively coupled to the capacitive storage device and has a gate stack that comprises a high-K dielectric (424) and a metal gate electrode (422) coupled to the high-K dielectric, wherein the high-K dielectric has a dielectric constant greater than a dielectric constant of silicon dioxide.
Inventors:
CAI JIN (US)
LUK WING (US)
LUK WING (US)
Application Number:
PCT/EP2007/053267
Publication Date:
December 21, 2007
Filing Date:
April 03, 2007
Export Citation:
Assignee:
IBM (US)
IBM UK (GB)
CAI JIN (US)
LUK WING (US)
IBM UK (GB)
CAI JIN (US)
LUK WING (US)
International Classes:
H01L21/8242; G11C8/16; G11C11/405; H01L21/28; H01L21/84; H01L27/12; H01L29/49
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