Title:
ELECTRICITY STORAGE DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/168493
Kind Code:
A1
Abstract:
An electricity storage device (30) is provided with: a first oxide semiconductor layer (14) having a first conductivity-type first oxide semiconductor; a first charging layer (16), which is disposed on the first oxide semiconductor layer (14), and which comprises a first insulating material and a first conductivity-type second oxide semiconductor; and a third oxide semiconductor layer (24) that is disposed on the first charging layer (16). The third oxide semiconductor layer (24) has hydrogen and a second conductivity-type third oxide semiconductor, and the percentage of the hydrogen to a metal constituting the third oxide semiconductor is 40 % or more. The electricity storage device capable of increasing electricity storage capacity per unit volume (weight) is provided.
Inventors:
TONOKAWA TAKASHI (JP)
TSUNOKUNI KAZUYUKI (JP)
KUDOH TAKUO (JP)
TSUNOKUNI KAZUYUKI (JP)
KUDOH TAKUO (JP)
Application Number:
PCT/JP2018/007770
Publication Date:
September 20, 2018
Filing Date:
March 01, 2018
Export Citation:
Assignee:
NIHON MICRONICS KK (JP)
International Classes:
H01M4/48; H01M4/52; H01M10/36
Domestic Patent References:
WO2016208116A1 | 2016-12-29 | |||
WO2017199618A1 | 2017-11-23 |
Foreign References:
JP2016127166A | 2016-07-11 | |||
JP2016082125A | 2016-05-16 | |||
JP2017059524A | 2017-03-23 | |||
JP2018022719A | 2018-02-08 | |||
JP2017182969A | 2017-10-05 | |||
JP2017195283A | 2017-10-26 | |||
JP2018037261A | 2018-03-08 | |||
JPS558542B2 | 1980-03-04 | |||
JP5297809B2 | 2013-09-25 | |||
JP2015082445A | 2015-04-27 | |||
JP2016082125A | 2016-05-16 |
Other References:
See also references of EP 3598563A4
Attorney, Agent or Firm:
MIYOSHI Hidekazu et al. (JP)
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