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Title:
ELECTRON-BEAM-PUMPED LIGHT SOURCE
Document Type and Number:
WIPO Patent Application WO/2012/063585
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide an electron-beam-pumped light source which is capable of uniformly irradiating one surface of a semiconductor light emitting element with electron beams, capable of achieving high light output without increasing the accelerating voltage of electron beams, and also capable of efficiently cooling the semiconductor light emitting element. This electron-beam-pumped light source is provided with an electron beam source and a semiconductor light emitting element that is excited by electron beams emitted from the electron beam source. The electron-beam-pumped light source is characterized in that: the electron beam source has a planar electron beam emitting portion and is arranged around the semiconductor light emitting element; and light is emitted from a surface of the semiconductor light emitting element, on said surface the electron beams from the electron beam source being incident.

Inventors:
YAMAGUCHI MASANORI (JP)
KATAOKA KEN (JP)
MAESOBA TSUYOSHI (JP)
TAKADA HIROYUKI (JP)
HATA HIROSHIGE (JP)
Application Number:
PCT/JP2011/073292
Publication Date:
May 18, 2012
Filing Date:
October 11, 2011
Export Citation:
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Assignee:
USHIO ELECTRIC INC (JP)
YAMAGUCHI MASANORI (JP)
KATAOKA KEN (JP)
MAESOBA TSUYOSHI (JP)
TAKADA HIROYUKI (JP)
HATA HIROSHIGE (JP)
International Classes:
H01S5/04; H01L33/48
Domestic Patent References:
WO2007023832A12007-03-01
Foreign References:
JPH09214027A1997-08-15
JP2006261150A2006-09-28
JP2001015840A2001-01-19
JPH0496281A1992-03-27
JP2006287028A2006-10-19
Attorney, Agent or Firm:
OHI, Masahiko (JP)
Masahiko Oi (JP)
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Claims:



 
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