[0001] The present invention concerns a special apparatus, hereinafter called electronic apparatus, for use in an electric or electronic circuit or circuitry.

[0002] According to the present invention, such an electronic apparatus comprises a body having two end portions and an intermediate portion in- between these end portions. The body or a conducting or semiconducting path, hereinafter called electrically conductive path, running around at least a part of said body has at least one constriction of cross-section. The electrically

conductive path forms a number of windings. The body and/or the electrically conductive path is inhomogeneously doped using different dopants so as to provide a respective intermediate section having a lower dopant concentration than the two end portions.

[0003] Preferably, the electronic apparatus is used as a resonator or

resonating element. All apparatus or embodiments of the invention are designed with a focus on their oscillating properties and behavior.

[0004] Preferably, all embodiments of the invention are designed in order to replace conventional batteries.

[0005] Preferably, the electronic apparatus is designed for use inside a power supply of an electronic or electric device or application. [0006] Preferably, all embodiments of the invention use a coupling of mechanical, electrical and thermal oscillations.

[0007] Preferably, in all embodiments of the invention a coupling is provided between ultrahigh frequency nucleic oscillations and electric resonance

oscillations in a much lower frequency regime.

[0008] Preferably, in all embodiments of the invention a certain degree of coherence of internal oscillations of the body material is provided in order to establish electromagnetic and mechanical components which can be used at the macroscopic level. Preferably, the degree of coherence is between 0,1 and 1 ppm (parts per million).

[0009] Preferred embodiments comprise an elongated body with a length which is at least 3 times as long as the width or diameter.

[00010] Further advantageous embodiments are defined in the dependent claims 2 through 11.

[00011] The apparatus of the various embodiments have the advantage that they are not damaged in case of a short-circuit and that high voltage peaks (beyond 50 V) are not going to destroy the apparatus.

[00012] A respective electric or electronic circuit or circuitry is claimed in independent claim 12.

[00013] The expression„apparatus" is herein used to describe small devices for integration into or connection to electric or electronic circuits or circuitry. The expression„apparatus" is, however, also used for larger devices, equipment, instruments or installments.

BRIEF DESCRIPTION OF THE DRAWINGS [00014] Characteristics and advantages of the invention will in the following be described in detail by means of the description and by making reference to the drawings.

Fig. 1A shows a pre-product of a first embodiment in a schematic front view; Fig. IB shows the pre-product of Fig. 1A in a perspective side view;

Fig. 1C shows an exemplary doping profile of the pre-product of Fig. 1A;

Fig. 2 shows a first embodiment in a schematic cross-sectional side view; Fig. 3A shows a pre-product of a second embodiment in a schematic cross- sectional side view;

Fig. 3B shows a second embodiment in a schematic cross-sectional side view; Fig. 4A shows a first step out of a first sequence of steps, according to the present invention;

Fig. 4B shows a second step out of the first sequence of steps, according to the present invention;

Fig. 4C shows a third step out of the first sequence of steps, according to the present invention;

Fig. 5A shows a first step out of a second sequence of steps, according to the present invention;

Fig. 5B shows a second step out of the second sequence of steps, according to the present invention;

Fig. 5C shows a third step out of the second sequence of steps, according to the present invention;

Fig. 6 shows an exemplary doping profile of another apparatus in accordance with the present invention;

Fig. 7 shows another exemplary doping profile of another apparatus in

accordance with the present invention;

Fig. 8 shows a simplified equivalent circuit diagram of the apparatus of Fig.

1A or Fig. 2;

Fig. 9 shows another simplified equivalent circuit diagram of the apparatus of

Fig. 1A or Fig. 2 with a load attached.

[00015] A first embodiment is described in connection with Figures 1A, IB, 1C and 2. The apparatus 10, as illustrated in Fig. 2, comprises a body 11 which has two end portions 12, 13 and an intermediate portion 14 in-between these end portions 12, 13. The shape and size of the body 11 depends on the actual implementation. Here it has a cylindrical body 11.

[00016] Preferred embodiments comprise an elongated body 11. An elongated body 11 is a body having a constitution where the length is at least as large as the width or diameter. Preferably, the apparatus 10 has an elongated body 11 with a length LA which is at least 3 times as long as the width or diameter DA, i.e. LA > 3DA.

[00017] The respective body 11 is in a pre-processing step exposed to or treated with dopants so as to establish a doping profile in the outer portion of the body 11. This doped outer portion is in Figures 1A, IB, 3A, and 3B illustrated as thin hatched layer 17. Due to the introduction of dopants a cladding, skin or layer 17 is provided which is electrically conducting since it has semiconducting properties. In all embodiments, the pre-product 1 comprises a semiconducting cladding, skin or layer 17.

[00018] The doping process in the present example is carried out so that an appropriate doping profile (e.g. the one depicted in Fig. 1C) is obtained. Figures 1A and IB show a pre-product 1 at the end of the doping step described.

[00019] The pre-product 1 here comprises an outer layer, cladding or skin 17 which is inhomogenesously doped in accordance with a pre-defined doping profile, such as the one depicted in Fig. 1C.

[00020] In a subsequent step the pre-product 1 is structured or patterned using for instance a photolithographic process followed by an etching process. A photo resist can be employed which covers those portions of the pre-product 1 which are not to be etched. The etching step thus only removes the uncovered (unprotected) portions of the pre-product 1. The result of these steps is depicted in Fig. 2, where a body 11 is shown which has a spiral path 16 running around the outer circumference. The spiral path 16 has been defined by the removal of a meander-shaped part of the doped layer 17 and portions of the body 11. The path 16 acts like a conductive path spiraling around the body 11. The respective path is hereinafter also referred to as electrically conductive path 16. [00021] Due to the fact that at least the outer part of the body 11 has been doped with a doping profile (like the one depicted in Fig. 1C), the spiral conductive path 16 has a doping profile which starts at the left hand side with a doping concentration pO and which reaches a maximum doping concentration pmax. After it has reached the maximum the concentration is reduced until it reaches zero or almost zero in case where a background doping concentration is given. Either a n-doped region follows right away, or an intermediate section 14 with zero dopant concentration or background doping concentration is realized inbetween the p-doped region 12 and n-doped region 13. In the region 13 the n- doping concentration increases until it reaches a maximum nmax. Then the concentration goes back to a concentration nO.

[00022] It is to be understood that Fig. 1C and the above description relate to a specific embodiment. The actual doping profile can also follow any of the profiles given in Figures 6 and 7, for instance. Preferred doping profiles do not have any sharp edges or transitions, but the doping profiles can have a sharp transition between the p-doped region 12 and n-doped region 13.

[00023] All embodiments of the invention have an electrically conductive path 16 running around at least a part of the body 11 so as to form a number N of windings. The embodiment of Fig. 2 has N =8 windings. In most embodiments the conductive path 16 extends from one end portion 12 to the other (opposite) end portion 13. It is, however, also possible to provide an apparatus 10 where the conductive path 16 only extends along a portion or section of the body 11.

[00024] The number N of windings is for all embodiments an integer number greater than 2.

[00025] The electrically conductive path 16 preferably has a spiral shape with constant slope, but it could also have any other meander shape. All embodiments of the invention can also have several electrically conductive paths 16 which are jointly meandering around the body 11.

[00026] The electrically conductive path 16 in all cases - is an integral part of the body 11, and/or

- is formed directly on the body 11, and/or

- is firmly connected with the body 11.

The respective connection of the conductive path 16 and the body 11 is preferably provided in that a sputtering, deposition or doping technology is used.

[00027] Preferred embodiments of the invention comprise a conductive path 16 the shape, size or region of which is defined by introduction of dopants into the body 11. As mentioned above, a combination of lithographic process steps followed by an etching step could be used to define the conductive path 16.

Likewise, an ion beam milling step can be employed in order to "write" a meandering structure into the body 11 which is going to serve as conductive path 16. It is also possible to provide a pre-product 1, such as the one depicted in Fig. 1A, IB or 3A, and to expose the pre-product 1 to a milling or sputtering step in order to remove material . This process will also lead to a body 11 with a conductive path 16 meandering around its circumference.

[00028] Yet another sequence of steps, as briefly addressed below, could be used to structure or pattern the pre-product 1. The respective steps are depicted in Figures 4A - 4C. A coil 30 is wound around the body 11 of the pre-product 1 of Fig. IB or 3A. The diameter of the filament of this coil 30 and the slope and number of windings are selected so that the coil 30 serves as temporary mask for a subsequent process step. During this subsequent process step (depicted in Fig. 4B) the pre-product 1 is exposed to an etchant E or an etching process (e.g. an ion beam etching process) is carried out. All portions of the body 11, respectively of its doped outer skin, cladding or layer 17 which are not protected or covered by the coil 30 are removed. In Fig. 4B one can see that the etchant E or etching process has removed material from the skin, cladding or layer 17 and body 11. After the etching process has been completed, the coil 30 is removed and a structure is revealed which is similar to the structures shown in Fig. 2 and 3B. The respective result is depicted in Fig. 4C.

[00029] Yet another sequence of steps, as briefly addressed below, could be used to form an apparatus 10. The respective steps are depicted in Figures 5A - 5C. A coil 30 is wound around the undoped body 11 (e.g. a body according to Fig. IB or 3A but without the layer 17). Then the doping profile is established using dopants D, as described above. During a doping procedure (depicted in Fig. 5B) the whole body 11 is exposed to the respective dopants D and the duration of exposure or concentrations are selected so as to obtain the desired doping profile. Due to the fact that the coil 30 covers certain portions of the body 11, a meander shaped region is formed around the body 11. After the doping process has been completed, the coil 30 is removed and a body 11 is revealed which comprises an electrically conducting path 16. The respective result is depicted in Fig. 5C. The embodiments based on the process steps of Figures 5A - 5C are different because the conductive path 16 is an integral part of the body 11. The respective path 16 is here integrated or formed inside the body 11. There are no ridges, threads, edges or the like running around the body 11.

[00030] In case of the embodiments depicted in Figures 4A - 4C and 5A - 5C the constriction(s) can be provided in that the body 11 is structured before or after the process steps of Figures 4A - 4C and 5A - 5C.

[00031] Any of the doping processes could be followed by a tempering step known in the art of doping.

[00032] An exemplary doping profile is illustrated in Fig. 1C. From left to right the doping profile in the present example has the following characteristics:

- the end portion 12 has a basic p-doping concentration pO at the left hand side;

- the p-doping concentration increases until it reaches a maximum pmax;

- then the p-doping concentration decreases;

- the intermediate section 14 is not doped (the doping concentration is about zero). The length of the intermediate section 14 can be zero or close to zero in which case there is immediate or almost immediate transition from the p- doped region to the n-doped region;

- the n-doping concentration increases until it reaches a maximum nmax;

- the n-doping concentration decreases until it reaches a doping concentration nO at the right hand side.

[00033] A second embodiment is described in connection with Figures 3A and 3B. The apparatus 10 comprises a body 11 which has two end portions 12, 13 and an intermediate portion 14 in-between these end portions 12, 13. The shape and size of the body 11 depends on the actual implementation.

[00034] The apparatus 10 comprise an elongated body 11 which here has a constriction 15. The length LA is about 5 to 6 times as long as the width or diameter DA.

[00035] The respective body has 11 one constriction of cross-section 15, as illustrated in Fig. 3A and 3B. The apparatus 10 further comprises an electrically conductive path 16 which is spiraling around the body 11.

[00036] The path 16, as shown in Fig. 2 and 3B, might comprise two contact pads, patches or bond wires 19 in order to conductively connect the section 16.1 of the conductive path 16 to a first metal contact 18.1 and the section 16.2 of the conductive path 16 to a second metal contact 18.2. The pads, patches or bond wires 19 are here shown as black bodies to indicate that they for instance are made from a metal or alloy.

[00037] Cables or probes could also serve as metal contacts 18.1, 18.2.

[00038] The metal contacts 18.1, 18.2 are designed so that a (trigger) signal can be applied to the apparatus 10. Preferably, in all embodiments of the invention a bipolar pulse is used as (trigger) signal.

[00039] All embodiments of the invention may comprise such metal contacts 18.1, 18.2.

[00040] Another exemplary doping profile is illustrated in Fig. 6. From left to right the doping profile has the following characteristics:

- the end portion 12 has a basic p-doping concentration pO at the left hand side;

- the p-doping concentration increases until it reaches a maximum pmax;

- then the p-doping concentration decreases;

- the intermediate section 14, right at the middle of the body 11, is not doped (the doping concentration is zero). The intermediate section 14 might have a length which is greater than zero or close to zero in which case there is no immediate or almost immediate transition from the p-doped region to the n- doped region;

- the n-doping concentration increases until it reaches a maximum nmax;

- the n-doping concentration decreases until it reaches a doping concentration nO at the right hand side.

[00041] Yet another doping profile is shown in Fig. 7. Here the maximum p- type doping concentration pmax = pO is at or close to the left hand side of the body 11. The doping concentration is steadily reduced so that the intermediate section 14 is undoped or comprises the background doping only. Then the n-type doping concentration increases until nmax = nO is reached at or close to the right and side of the body 11. The intermediate section 14 might have a length which is close to zero or zero.

[00042] Preferred embodiments comprise an electrically conductive path 16 which is defined in the material of the body 11 by a doping technology (e.g. formed in accordance with a process illustrated in Figures 5A - 5C).

[00043] All embodiments of the invention comprise an imhomogeneously doped electrically conductive path 16.

[00044] Preferred embodiments comprise an electrically conductive path 16 which is very thin. Preferably, the conductive path 16 has a thickness tl of 10 - 10000 nm and a width wl of 0.1 mm - 1 mm (see Fig. 5C). These dimensions are valid mainly for small apparatus 10 having an overall length LA of less than 10 cm. It goes without saying that in case of a larger apparatus 10, the respective dimensions of the electrically conductive path 16 might also be larger.

[00045] The conductive path 16 is inhomogeneously doped using different dopants D. The doping is carried out so that an intermediate section 14 of said conductive path 16 is provided which has a lower dopant concentration than the two end sections 16.1, 16.2. The intermediate section 14 might have a length which is close to zero or zero. [00046] Preferred embodiments comprise a symmetric doping profile where the plane of symmetry PS is in the middle of body 11 (cf. Fig. 1C, 6, 7).

[00047] The expression intermediate section" 14 is used to describe a zone or area of the body 11 which is sitting/provided between the two end portions 12,

13 and where the conductive path 16 has a reduced dopant level or

concentration. Preferably, all embodiments have an intermediate section 14 where the conductive path 16 has a doping concentration of less than 10 ¹⁵ atoms/cm ³ .

[00048] In preferred embodiments there is no artificial doping of the

conductive path 16 of the intermediate section 14, which means that this section

14 contains only the naturally occurring background doping concentration.

[00049] In order to be able to integrate or connect the apparatus 10 to an electric or electronic circuit or circuitry, the first metal contact 18.1 and the second metal contact 18.2 are provided. The first metal contact 18.1 is here conductively connected to a first of the two end sections 16.1 and the second metal contact 18.2 is conductively connected to a second of the two end sections 16.2, as for instance depicted in Fig. 2 or Fig. 3B. Copper (Cu) is well suited as first metal contact 18.1 and/or second metal contact 18.2. Gold and platinum are also suited. As mentioned above, the conductive connection could be provided by pads, patches, bond wires, cables and the like.

[00050] As for instance depicted in Fig. 2 or Fig. 3B, there might be diode transitions (here indiacted by the reference signs Dl, D2) at both ends.

Preferably, these diode transitions Dl, D2 sit between the section 16.1 and the corresponding pads, patches, bond wires, or cable 19 and between the section 16.2 and the corresponding pads, patches, bond wires, or cable 19.

[00051] The diode transition Dl may be realized by a nO - p transition, whereas the diode transition D2 may be realized by a n - p transition.

[00052] The expression„semiconducting" is used in connection with the conductive path 16 so as to define or specify that the respective body part comprises a semiconductor material or another material (such as an insulator or metal) which has semiconducting properties. Ceramic as well as organic materials can also be used as material . Some of these materials, however, require additional treatment steps for preconditioning purposes. A typical treatment could be a heating step. Such a heating step is preferably applied when using SiC as material. During this heating step a temperature beyond 200 degrees Centigrade should be established. The defining property of a material, as herein used, is that it can be doped with impurities which alter its electronic properties in a controllable way.

[00053] In all embodiments the body 11 and/or the outer layer 17 may be made using a single or polycrystalline material .

[00054] Preferred embodiments comprise a body 11 and/or the outer layer 17 which comprises Silicon (Si) or a Silicon-based material, such as Silicon carbide (SiC) or a Silicate. Also suited is Germanium (Ge), Silicon Germanium (SiGe), Titanium oxide (Ti0 ₂ ), Gallium Arsenide (GaAs), and compounds of two or more of the mentioned materials. Very well suited are materials having an even number of protons and neutrons (such as 14 + 14 in case of Silicon). Germanium (Ge) and Silicon carbide (SiC) are also well suited as materials.

[00055] Doping profiles are preferred which have no sharp edges or steps. The illustrations given in Figures 1C, 6 and 7 are exaggerated and simplified since semiconductor technology does not provide for such sharp edges or steps. In real situations the transitions are smoother.

[00056] The semiconducting properties are given at least in the longitudinal direction of the conductive path 16.

[00057] In preferred embodiments of the invention the material of the body 11 is chosen or treated so that it provides for a certain coherence as a

predisposition. The coherence can be obtained by choosing the right material or it can be ensured during crystallization of the material. The degree of coherence can also or in addition be influenced by application of an impulse (in order to obtain a rearrangement or alignment of at least 0,1 ppm - 1 ppm (parts per million) of the atomic nuclei of the body 11).

[00058] Preferred embodiments comprise Schottky diodes Dl, D2 at one or at both ends of the conductive path 16. An n/ρθ junction might provide for the transition between the first metal contact 18.1 and the first end section 16.1 and/or an nO/p junction might provide for the transition between the second metal contact 18.2 and the second end section 16.2. The respective metal- semiconductor contact provides for the respective Schottky barrier(s). The respective Schottky diode(s) Dl, D2 has/have a rectifying property. The basic electronic properties are defined by this/these metal-semiconductor transition(s). The Schottky diode(s) Dl, D2 has/have the property or the ability to restrict the current flow to substantially one direction.

[00059] Preferred embodiments are designed so that

- the first end section 16.1 is p-doped with a first dopant concentration,

- the second end section 16.2 is n-doped with a second dopant concentration, and

- the intermediate section 14 (if its length is greater than zero) of the

conductive path 16 has a constitution or layout with lower dopant

concentration. The lower dopant concentration is smaller than the first dopant concentration and smaller than the second dopant concentration.

[00060] In all embodiments the first dopant concentration is preferably greater than 10 ¹⁶ atoms/cm ³ . Even more preferred are embodiments having a first dopant concentration greater than 10 ¹⁷ atoms/cm ³ .

[00061] In all embodiments the second dopant concentration is preferably greater than 10 ¹⁶ atoms/cm ³ . Even more preferred are embodiments having a second dopant concentration greater than 10 ¹⁷ atoms/cm ³ .

[00062] A simplified equivalent circuit diagram of the apparatus 10 of Fig. 2 or 3B is shown in Fig. 8. For the sake of simplicity the same reference number are used in Fig. 2, 3B and 8 so as to illustrate the relationship between the various elements and aspects. Another simplified equivalent circuit diagram of the apparatus 10 of Fig. 2 or 3B is shown in Fig. 9. The elongated body 11 with differently doped zones or regions is represented by the two coils LI, L2. The mass of the body 11 is represented by the capacitor CI . The body 11 together with the electrically conductive path 16 running around at least a part of the body 11 is represented by the coil L3. The body 11 together with the conductive path 16 behave like an inductance (represented by L3). The coils LI, L2 together with the capacitor CI define the thermomechanical dynamic behavior or properties of the body 11 of the apparatus 10. In Fig. 9 resistors Ri/2 are included to represent the resistance of the body 11. The overall resistance between one end of the spiral conductive path 16 and the opposite end is Ri. A resistor R _N is shown which serves as load. An ouput voltage is provided between the first metal contact 18.1 and the second metal contact 18.2. In Fig. 9 R _N represents an external load.

[00063] In a preferred embodiment of the invention the apparatus 10 is designed so as to be used as resonator or resonating element. Such a resonator or resonating element can be employed as part of an oscillating circuit or circuitry which for instance is used inside a power supply of an electronic or electric device or appliance. If used as part of a power supply, the apparatus 10 is providing electric energy when oscillating. The apparatus 10 can be used in a power supply to provide a stable (direct current) voltage.

[00064] During each phase of oscillation charge carriers due to a back reflection at the Schottky diodes Dl, D2 are caused to be released into the first metal contact 18.1 or second metal contact 18.2, respectively. Due to this behavior, a direct current of constant amplitude is provided. Depending on the actual circuit or circuitry in which the apparatus 10 is used, up to 10 V can be measured at about 0.5 A.

[00065] The constriction(s) 15 of he body 11 and/or the conductive path 16 provide for an increase of the current density inside the conductive path 16 and the electron waves inside the conductive path 16 are caused to contract. In the wider areas of the conductive path 16 (i.e. in those regions where there is no constriction 15), the electron waves inside the conductive path 16 are expanding. The constriction(s) 15 thus provide(s) for an excitation of thermal and mechanical modi which are synchronously oscillating with the charge carriers as standing waves (pretty much like a laser). The word„modus" is herein used to describe a standing wave having a discrete wave number and a corresponding frequency.

[00066] Modi can only be coupled and energy be made available if the modi are excited. In an equilibrium there is only white noise because of the incoherence. If a certain degree of coherence (spatial and chronological coherence) is ensured inside the body material, then modi will be exited. The excitation of a modus can be achieved by the application of a (trigger) signal, that is by the application of an energy pulse. The application of a (trigger) or energy pulse establishes or enables the entering into the non-linear regime.

[00067] In a preferred embodiment of the invention the apparatus 10 is designed so that non-linear effects are used. The non-linear effects can be observed since due to the overall structure of the apparatus 10 mechanical, electrical and thermal effects are superimposed. The respective mechanical, electrical and thermal oscillations of the apparatus 10 are coupled. These three effects provide for the apparatus ^" ability or capability to oscillate.

[00068] The thermal effects are a superposition or a co-action of thermally induced expansion, heat conduction, and thermoelectric effects.

[00069] The respective mechanical oscillation is mainly influenced or caused by an oscillation of the atomic nuclei of the conductive path 16 and/or the body material of the apparatus 10. These nuclei oscillate or swing along their respective spin axis at a frequency of about 10 ²¹ Hz (in case of a Silicon body material). The 10 ²¹ Hz correspond to about 3 MeV per level of oscillation .

[00070] The atomic nuclei, for instance the Silicon nuclei in case of a Silicon body material show a so-called intrinsic giant resonance. The giant resonance is a collective high-frequency excitation of the nuclei. In a preferred embodiment of the invention the giant resonance of apparatus 10 is employed or exploited.

Since the respective mechanical oscillations are incoherent, they cannot be detected or observed outside the body 11 or conductive path 16. This is due to the fact that all oscillations compensate each other from a statistic point of view.

[00071] In preferred embodiments, a coupling is provided between the ultrahigh frequency nucleic oscillations and electric resonance oscillations in a lower frequency regime.

[00072] The conductive path 16 running around at least a part of the body 11 is establishing a (synchronous) magnetic field inside the apparatus 10 if a current is caused to flow through the N windings established by the conductive path 16. The respective magnetic field might be employed in a preferred embodiment to rearrange or align the atomic nuclei of the body 11 of the apparatus 10. The magnetic field turns at least a small portion or fraction of the incoherent oscillations inside the body 11 into coherent oscillations. A certain degree of coherence of the internal oscillations is required in order to establish electromagnetic and mechanical components which can be used at the

macroscopic level. Electric and magnetic nucleic torque moments are caused to add up to macroscopic electrical and/or magnetic polarizations. These

polarizations are directly coupled with the thermal, mechanical and

electromagnetic properties of the body 11.

[00073] According to the invention this is possible at room temperature.

Preferred embodiments can be operated at temperatures in the range between - 20 degrees Centigrade and + 50 degrees Centigrade.

[00074] Experiments revealed that it is sufficient to provide for a

rearrangement or alignment of about 1 ppm (parts per million) of the atomic nuclei of the body 11. All embodiments of the invention thus are provided with a rearrangement or alignment of at least 0,1 ppm - 1 ppm (parts per million) of the atomic nuclei of the body 11, in order to obtain the required coherence.

[00075] The apparatus 10 of the various embodiments could be used to replace existing diodes, for instance. The existing diodes typically have a good electrical performance, but thermal effects are typically not addressed or accounted for. The apparatus 10 of the various embodiments is designed taking into consideration mechanical, thermal and electric aspects, as mentioned above.

[00076] The following aspects are considered when designing an apparatus 10 :

- geometry/dimensions;

- choice of material;

- doping profile, dopants D used and doping concentrations;

- oscillating behavior.

[00077] The apparatus 10 of the various embodiments can be employed in a circuit or circuitry where an electrically induced input (trigger) signal is applied to the conductive path 16. This input signal influences the oscillation of the atom nuclei, as mentioned above.

[00078] In a preferred embodiment of the invention the apparatus 10 is designed to be used as technical oscillator, e.g. as part of an electric/electronic circuit or circuitry. There are many different types of oscillator circuits where the present apparatus 10 can be employed.

[00079] In a preferred embodiment of the invention the apparatus 10 is designed to be used as part of an electric/electronic circuit or circuitry. It could be used to replace, support or compliment a diode, or a current source or a voltage source.

[00080] All embodiments of the apparatus 10 are, like an LC circuit, able to store and release energy.

[00081] Preferred embodiments comprise elements such as boron (B) or aluminum (Al) as p-type dopants and phosphorus (P) or arsenic (As) as n-type dopants. Nitrogen (N) and Antimony (Sb) can also be used as dopants. The dopants D actually used are dependent upon the type of material (semiconductor material) used. The body 11 can be doped by such processes as diffusion and/or ion implantation. Other dopants D and other doping processes or technologies known in the art can also be used. [00082] Preferred embodiments comprise an intrinsic (not intentionally doped or substantially undoped) body material in the intermediate portion 14.

Preferably, all embodiments have an intermediate portion 14 with a doping concentration less than 10 ¹⁵ atoms/cm ³ .

[00083] In accordance with a preferred embodiment of the invention, the diode functionality of the apparatus 10 is used in order to realize a transistor or another active switching element.

[00084] In accordance with another preferred embodiment of the invention, the apparatus 10 is used in connection with a conventional quarz oscillator or crystal oscillator. Preferably, the apparatus 10 is arranged in parallel to this oscillator.

[00085] In accordance with yet another preferred embodiment of the invention, the apparatus 10 is used in connection with an operational amplifier (opamp).

[00086] In accordance with a preferred embodiment of the invention, the apparatus 10 is mounted in a circuit or circuitry so that no damping of

mechanical oscillations in the high-frequency regime occurs.

[00087] The various embodiments disclosed can be used in various fields, including home applicances, consumer goods, professional appliances and equipment, communication systems, media systems, medical applications, vehicles, machines, military applications and so forth.