ELECTRONIC DEVICE, AND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

Title:

ELECTRONIC DEVICE, AND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

Document Type and Number:

WIPO Patent Application WO/2022/142339

Kind Code:

A1

Abstract:

The present application relates to an electronic device, and a semiconductor device and a manufacturing method therefor. The semiconductor device comprises: a substrate having a first conductivity type; a first buried layer having a second conductivity type and formed in the substrate, the second conductivity type being opposite to the first conductivity type; a second buried layer having the second conductivity type and formed on an upper surface of the first buried layer, the doping concentration of the second buried layer being lower than the doping concentration of the first buried layer; a second conductive type well region formed on the second buried layer, the bottom of the second conductive type well region being in contact with the second buried layer; a device layer formed in a region enclosed by the second buried layer and the second conductivity-type well region, the device layer comprising a first conductivity-type well region, and the first conductivity-type well region being formed on the upper surface of the second buried layer close to the second conductivity-type well region. A breakdown voltage of a planar junction formed by the second conductivity-type well region and the second buried layer is related to the doping concentration of the second buried layer, so that when the doping concentration of the first buried layer is increased to reduce a substrate current, the breakdown voltage of the planar junction is not reduced.

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Inventors:

JIN HUAJUN (CN)
LI CHUNXU (CN)
LIN FENG (CN)

Application Number:

PCT/CN2021/110283

Publication Date:

July 07, 2022

Filing Date:

August 03, 2021

Export Citation:

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Assignee:

CSMC TECHNOLOGIES FAB2 CO LTD (CN)

International Classes:

H01L29/06; H01L29/78

Foreign References:

US20180233555A1	2018-08-16
US20160315141A1	2016-10-27
CN110518070A	2019-11-29
US20170148873A1	2017-05-25

Attorney, Agent or Firm:

J.Z.M.C. PATENT AND TRADEMARK LAW OFFICE (CN)

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