EPITAXIAL GROWTH SUBSTRATE, SEMICONDUCTOR DEVICE, AND EPITAXIAL GROWTH METHOD

WIPO Patent Application WO/2011/161975

A1

Provided is an epitaxial growth substrate wherein the occurrence of a crack at the end of a wafer when a group-III nitride semiconductor is heteroepitaxially grown on a Si single crystal substrate is suppressed. A region (A) is an outermost peripheral portion on the outer side of a principal surface, and as illustrated, a tapered bevel portion. A region (B) and a region (C) are on the same plane (principal surface), the region (B) (mirror surface portion) is a center portion of the principal surface, and the region (C) is the region of a main surface end portion surrounding the region (B). The plane orientation of the principal surface is set to the (111) plane, and the region (B) is subjected to mirror surface finishing. The region (B) occupies a large part of the principal surface of the Si single crystal substrate (11), and a semiconductor device is manufactured thereon. The plane orientation of the region (C) (roughened surface portion) is set to the (111) plane as in the case of the region (B), but the region (C) is subjected to surface roughening, whereas the region (B) is subjected to mirror surface finishing.

IKUTA TETSUYA (JP)
HINO DAISUKE (JP)
SHIBATA TOMOHIKO (JP)

PCT/JP2011/003630

December 29, 2011

June 24, 2011

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DOWA ELECTRONICS MATERIALS CO (JP)
IKUTA TETSUYA (JP)
HINO DAISUKE (JP)
SHIBATA TOMOHIKO (JP)

H01L21/205; C30B25/18; H01L21/338; H01L29/778; H01L29/812

JPH0473930A	1992-03-09
JP2003060234A	2003-02-28

HORI, Shiroyuki et al. (JP)
Ditch Shiroyuki (JP)

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