SILICON CARBIDE SUBSTRATE MANUFACTURING METHOD AND MANUFACTURING DEVICE

WIPO Patent Application WO/2011/161976

A1

A step for preparing a laminate (TX) is performed in such a manner that each substrate of a first single crystal substrate group (10a) and a first base substrate (30a) face each other, each substrate of a second single crystal substrate group (10b) and a second base substrate (30b) face each other, and the first single crystal substrate group (10a), the first base substrate (30a), an insertion part (60X), the second single crystal substrate group (10b), and the second base substrate (30b) are stacked in this order in one direction. Next, the laminate (TX) is heated in such a manner that the temperature of the laminate (TX) reaches a temperature at which silicon carbide can sublime and a temperature gradient such that the temperature increases in the one direction within the laminate (TX) is formed. Consequently, a silicon carbide substrate (81) can be efficiently manufactured.

INOUE HIROKI (JP)
HARADA SHIN (JP)
SASAKI MAKOTO (JP)
NISHIGUCHI TARO (JP)
OKITA KYOKO (JP)
NAMIKAWA YASUO (JP)

PCT/JP2011/050142

December 29, 2011

January 07, 2011

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SUMITOMO ELECTRIC INDUSTRIES (JP)
INOUE HIROKI (JP)
HARADA SHIN (JP)
SASAKI MAKOTO (JP)
NISHIGUCHI TARO (JP)
OKITA KYOKO (JP)
NAMIKAWA YASUO (JP)

H01L21/02; H01L21/20; H01L21/336; H01L29/12; H01L29/78

WO2001018872A1

2001-03-15

JP2009117533A	2009-05-28
JPH1112100A	1999-01-19
JPH1131828A	1999-02-02
JPH1129397A	1999-02-02
JPH11279760A	1999-10-12
JP2009158933A	2009-07-16
US7314520B2	2008-01-01

Fukami Patent Office, p. c. (JP)
Patent business corporation Fukami patent firm (JP)

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