EPITAXIAL SUBSTRATE FOR ELECTRONIC DEVICE, AND METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE FOR ELECTRONIC DEVICE

WIPO Patent Application WO/2015/045412

A1

Provided is an epitaxial substrate for electronic devices, said epitaxial substrate having suppressed warpage. According to the present invention, an epitaxial substrate (1) for electronic devices, said epitaxial substrate having the lateral direction as the current conduction direction, is characterized in that: the epitaxial substrate is provided with a Si single crystal substrate (2), an initially grown layer (3) formed on the Si single crystal substrate (2), a superlattice laminated body (4) formed on the initially grown layer (3), a channel layer (5) formed on the superlattice laminated body (4), and an electron supply layer (6) formed on the channel layer (5); the superlattice laminated body (4) has a superlattice structure configured by alternately laminating first layers (4a) formed of Ba1Alb1Gac1Ind1N (0≤a1<1, 0