Title:
GAS SENSOR
Document Type and Number:
WIPO Patent Application WO/2015/045411
Kind Code:
A1
Abstract:
Provided is a simple, small, and highly reliable gas sensor whereby a measurement error can be reduced. This gas sensor is provided with: a first light source (20); and a first sensor section (31) and a second sensor section (32), which are disposed so as to have inputted thereto light having been outputted from the first light source (20). The gas sensor is also provided with: a first substrate (41) having the first light source (20) and the first sensor section (31) provided on a first main surface (411) thereof; and a second substrate (42) having the second sensor section (32) provided on a first main surface (422). The position where the first sensor section (31) is disposed is on the first main surface (411) of the first substrate (41), and is set where light reflected by the second main surface (412) is inputted, said light being among the light having been outputted from the first light source (20).
Inventors:
CAMARGO EDSON GOMES (JP)
TAKEHARA SATOSHI (JP)
TAKEHARA SATOSHI (JP)
Application Number:
PCT/JP2014/004955
Publication Date:
April 02, 2015
Filing Date:
September 26, 2014
Export Citation:
Assignee:
ASAHI KASEI MICRODEVICES CORP (JP)
International Classes:
G01N21/61; G01N21/03; G01N21/3504; H01L31/12
Domestic Patent References:
| WO2007080398A1 | 2007-07-19 |
Foreign References:
| JP2010522868A | 2010-07-08 | |||
| JP2008509381A | 2008-03-27 | |||
| JPH08247889A | 1996-09-27 | |||
| JP2008157809A | 2008-07-10 | |||
| JP2009257919A | 2009-11-05 | |||
| JPH0572130A | 1993-03-23 | |||
| JP2008309583A | 2008-12-25 | |||
| US6331704B1 | 2001-12-18 | |||
| JP2001503865A | 2001-03-21 |
Other References:
CROWDER J G ET AL.: "Minimally cooled InSb/lnAlSb LED and photodiode devices applied to nitrogen dioxide detection at ppm levels", ELECTRONICS LETTERS, vol. 36, no. 22, 26 October 2000 (2000-10-26), pages 1867 - 1869, XP006015853
AIDARALIEV M ET AL.: "Lattice-Matched GaInPAsSb/InAs Structures for Devices of Infrared Optoelectronics", SEMICONDUCTORS, vol. 36, no. 8, 2002, pages 944 - 949, XP055329341
See also references of EP 3051274A4
AIDARALIEV M ET AL.: "Lattice-Matched GaInPAsSb/InAs Structures for Devices of Infrared Optoelectronics", SEMICONDUCTORS, vol. 36, no. 8, 2002, pages 944 - 949, XP055329341
See also references of EP 3051274A4
Attorney, Agent or Firm:
MORI, Tetsuya et al. (JP)
Woods Tetsuya (JP)
Woods Tetsuya (JP)
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