Title:
EPITAXIAL WAFER AND COMPOUND SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/1999/026297
Kind Code:
A1
Abstract:
An epitaxial wafer having a good surface and having a buffer layer of a resistance higher than that of the prior art. The epitaxial wafer has at least a buffer layer (42) and an active layer (43) successively formed on a GaAs substrate (41), wherein the buffer layer (42) has a multilayer structure of a non-doped Al¿Y?Ga¿1-Y?As (0.005$m(F)Y$m(F)0.05) layer (42a) and a non-doped Al¿X?Ga¿1-X?As (0.10$m(F)X$m(F)0.35) layer (42b). The non-doped Al¿Y?Ga¿1-Y?As (0.005$m(F)Y$m(F)0.05) layer (42a) is in contact with the GaAs substrate (41).
Inventors:
IKEDA MASAKIYO (JP)
KOJIMA SEIJI (JP)
KOJIMA SEIJI (JP)
Application Number:
PCT/JP1998/005136
Publication Date:
May 27, 1999
Filing Date:
November 16, 1998
Export Citation:
Assignee:
FURUKAWA ELECTRIC CO LTD (JP)
IKEDA MASAKIYO (JP)
KOJIMA SEIJI (JP)
IKEDA MASAKIYO (JP)
KOJIMA SEIJI (JP)
International Classes:
H01L29/10; (IPC1-7): H01L29/812; H01L29/778
Foreign References:
| JPS63164476A | 1988-07-07 | |||
| JPS58107679A | 1983-06-27 | |||
| JPH05235043A | 1993-09-10 |
Attorney, Agent or Firm:
Osawa, Makoto (5th floor 37, Kanda-Higashimatsushita-cho Chiyoda-ku Tokyo, JP)
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