Title:
EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2015/059988
Kind Code:
A1
Abstract:
Provided are an epitaxial wafer that makes it possible to manufacture a light-receiving element in which dark current is suppressed and sensitivity is secured, and a method for manufacturing the epitaxial wafer. This epitaxial wafer is provided with an III-V group semiconductor substrate and a plurality of pairs of multi-quantum wells which are positioned on the substrate and which have a first layer and a second layer as each of the pairs. In the multi-quantum wells, the total of elements contained as impurities is 5 × 1015 cm-3 or less.
Inventors:
FUJII KEI (JP)
NISHIZUKA KOJI (JP)
KYONO TAKASHI (JP)
SHIBATA KAORU (JP)
AKITA KATSUSHI (JP)
NISHIZUKA KOJI (JP)
KYONO TAKASHI (JP)
SHIBATA KAORU (JP)
AKITA KATSUSHI (JP)
Application Number:
PCT/JP2014/071560
Publication Date:
April 30, 2015
Filing Date:
August 18, 2014
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
H01L21/20; H01L31/10
Domestic Patent References:
| WO2011016309A1 | 2011-02-10 |
Foreign References:
| JP2007137883A | 2007-06-07 | |||
| JP2006104189A | 2006-04-20 | |||
| JP2003064090A | 2003-03-05 | |||
| JPH02181978A | 1990-07-16 |
Attorney, Agent or Firm:
NAKATA, Motomi et al. (JP)
Nakada Motoki (JP)
Nakada Motoki (JP)
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