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Title:
ETCHING FLUID FOR SEMICONDUCTOR SUBSTRATE, ETCHING METHOD USING SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT
Document Type and Number:
WIPO Patent Application WO/2014/077320
Kind Code:
A1
Abstract:
An etching fluid for processing a substrate having a first layer containing titanium nitride (TiN) and a second layer containing a transition metal, and selectively removing the first layer, wherein the fluid contains a fluorine-containing compound, an oxidation agent, and an organic silicon compound.

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Inventors:
KAMIMURA TETSUYA (JP)
MURO NAOTSUGU (JP)
INABA TADASHI (JP)
Application Number:
PCT/JP2013/080797
Publication Date:
May 22, 2014
Filing Date:
November 14, 2013
Export Citation:
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Assignee:
FUJIFILM CORP (JP)
International Classes:
H01L21/306; H01L21/308; H01L21/768
Foreign References:
JP2009021516A2009-01-29
JP2009044129A2009-02-26
JP2009019255A2009-01-29
JP2009527131A2009-07-23
JP2010515246A2010-05-06
JPH11145144A1999-05-28
JPH07281445A1995-10-27
JP2005097115A2005-04-14
JP2008285508A2008-11-27
Attorney, Agent or Firm:
IIDA, Toshizo et al. (JP)
Toshizo Iida (JP)
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