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Title:
ETCHING LIQUID FOR ALUMINUM-OXIDE FILMS AND THIN-FILM-SEMICONDUCTOR-DEVICE MANUFACTURING METHOD USING SAID ETCHING LIQUID
Document Type and Number:
WIPO Patent Application WO/2014/171054
Kind Code:
A1
Abstract:
This etching liquid is specialized for etching aluminum-oxide films with densities between 2.80 g/cm3 and 3.25 g/cm3, inclusive. Said etching liquid is prepared so as to contain phosphoric acid in an amount between 30 wt.% and 80 wt.%, inclusive; at most 10 wt.% nitric acid; and a surfactant in an amount between 0.0005 wt.% and 0.0050 wt.%, inclusive.

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Inventors:
HIGASHI HIROFUMI
HIDAKA YOSHIHARU
Application Number:
PCT/JP2014/001268
Publication Date:
October 23, 2014
Filing Date:
March 07, 2014
Export Citation:
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Assignee:
PANASONIC CORP (JP)
International Classes:
H01L21/308; C23F1/20; H01L21/306; H01L21/336; H01L29/786
Domestic Patent References:
WO2005028207A12005-03-31
Foreign References:
JPH04506528A1992-11-12
JP2007305996A2007-11-22
Attorney, Agent or Firm:
NAKAJIMA & ASSOCIATES IP FIRM et al. (JP)
Patent business corporation The Nakajima intellectual property synthesis office (JP)
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