Title:
ETCHING LIQUID COMPOSITION
Document Type and Number:
WIPO Patent Application WO/2022/264631
Kind Code:
A1
Abstract:
The present invention provides an etching liquid composition which is capable of achieving a good balance between a high etching selectivity with respect to silicon nitride and suppression of silica deposition on a silicon oxide surface. An etching liquid composition which is an inorganic acid-based etching liquid composition for selectively etching silicon nitride from a semiconductor that contains silicon nitride and silicon oxide, and which contains (a) an etching inhibitor that inhibits etching of silicon oxide and (b) a deposition inhibitor which inhibits silica deposition on the surface of silicon oxide.
Inventors:
NAGAO SHO (JP)
INOUE TOMOHIRO (JP)
MITSUI TAKAO (JP)
OSHITA NOBUHIRO (JP)
UCHIDA REIJI (JP)
INOUE TOMOHIRO (JP)
MITSUI TAKAO (JP)
OSHITA NOBUHIRO (JP)
UCHIDA REIJI (JP)
Application Number:
PCT/JP2022/015849
Publication Date:
December 22, 2022
Filing Date:
March 30, 2022
Export Citation:
Assignee:
RASA IND LTD (JP)
International Classes:
H01L21/308; H01L21/306
Foreign References:
| JP2019080049A | 2019-05-23 | |||
| JP2020533786A | 2020-11-19 | |||
| JP2020503664A | 2020-01-30 | |||
| KR20180010483A | 2018-01-31 |
Attorney, Agent or Firm:
OKINAKA Jin (JP)
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