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Patent Searching and Data


Title:
ETCHING METHOD, ETCHING APPARATUS, AND RING MEMBER
Document Type and Number:
WIPO Patent Application WO/2011/090109
Kind Code:
A1
Abstract:
Disclosed is an etching method which includes: a step wherein a substrate is carried into a treatment chamber, and the substrate is placed on a placing table; a step wherein, a treatment gas is jetted in a shower-like manner from a gas supply section facing the substrate, in a state wherein a ring member is disposed to surround the substrate, said ring member having the main component of at least the surface portion being the same as the main component of a substrate film to be etched, and the film to be etched is etched by having the treatment gas in the plasma state; and a step wherein the inside of the treatment chamber is subjected to vacuum through an air-releasing path. Thus, nonuniformity of the distribution of active species in the plasma close to the circumferential end portion of the substrate is suppressed.

Inventors:
SUZUKI AYUTA (JP)
KANG SONGYUN (JP)
MORIYA TSUYOSHI (JP)
TERASAWA NOBUTOSHI (JP)
OKABE YOSHIAKI (JP)
Application Number:
PCT/JP2011/050960
Publication Date:
July 28, 2011
Filing Date:
January 20, 2011
Export Citation:
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Assignee:
TOKYO ELECTRON LTD (JP)
SUZUKI AYUTA (JP)
KANG SONGYUN (JP)
MORIYA TSUYOSHI (JP)
TERASAWA NOBUTOSHI (JP)
OKABE YOSHIAKI (JP)
International Classes:
H01L21/3065
Foreign References:
JPH07245292A1995-09-19
Attorney, Agent or Firm:
KATSUNUMA Hirohito et al. (JP)
Katsunuma Hirohito (JP)
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Claims: