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Patent Searching and Data


Title:
ETCHING METHOD AND ETCHING DEVICE FOR COPPER MOLYBDENUM FILM LAYER
Document Type and Number:
WIPO Patent Application WO/2020/042257
Kind Code:
A1
Abstract:
An etching method for a copper molybdenum film layer, comprising: forming the copper molybdenum film layer on a substrate (S10); forming a photoresist in a predetermined pattern on the copper molybdenum film layer (S20); placing, in an etching device, the substrate on which the photoresist is formed (S30); performing ultraviolet irradiation inside the etching device, and filling ozone into the etching device (S40); and using an etching liquid to etch the copper molybdenum film layer (S50). Said method can improve the etching efficiency and productivity, and can also decrease the usage amount of the etching liquid and further reduce the cost of the etching liquid. Also provided is an etching device for a copper molybdenum film layer.

Inventors:
ZHAO FENLI (CN)
Application Number:
PCT/CN2018/107198
Publication Date:
March 05, 2020
Filing Date:
September 25, 2018
Export Citation:
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Assignee:
SHENZHEN CHINA STAR OPTOELECT (CN)
International Classes:
C23F1/18
Foreign References:
CN101764085A2010-06-30
CN101764085A2010-06-30
CN101764087A2010-06-30
CN101764087A2010-06-30
CN108242388A2018-07-03
CN103219260A2013-07-24
CN103436884A2013-12-11
US20040166675A12004-08-26
Attorney, Agent or Firm:
ESSEN PATENT & TRADEMARK AGENCY (CN)
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