Title:
ETCHING METHOD AND PLASMA PROCESSING APPARATUS
Document Type and Number:
WIPO Patent Application WO/2023/127820
Kind Code:
A1
Abstract:
An etching method according to the present invention comprises: (a) a step for providing a substrate which comprises an organic film and a mask that is arranged on the organic film; (b) a step for forming a recess in the organic film by etching the organic film by means of a first plasma which is generated from a first processing gas that contains an oxygen-containing gas; and (c) a step for exposing the recess to a second plasma which is generated from a second processing gas that contains a tungsten-containing gas after the step (b).
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Inventors:
MUKAIYAMA KOKI (JP)
TOMURA MAJU (JP)
KIHARA YOSHIHIDE (JP)
TOMURA MAJU (JP)
KIHARA YOSHIHIDE (JP)
Application Number:
PCT/JP2022/047980
Publication Date:
July 06, 2023
Filing Date:
December 26, 2022
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/3065
Domestic Patent References:
| WO2020096817A1 | 2020-05-14 |
Foreign References:
| JP2019207911A | 2019-12-05 | |||
| JPH07142411A | 1995-06-02 | |||
| JPH07176484A | 1995-07-14 | |||
| JP2021082701A | 2021-05-27 |
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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