Title:
ETCHING METHOD, AND SUBSTRATE-PROCESSING APPARATUS
Document Type and Number:
WIPO Patent Application WO/2020/008933
Kind Code:
A1
Abstract:
Provided is an etching method performed in a substrate-processing apparatus having: a first electrode on which a substrate is placed; and a second electrode facing the first electrode, the method comprising: a first step for introducing a first gas and halfway etching a target film into a pattern of a predetermined film on the target film formed on the substrate; a second step for introducing a second gas including Ar gas, H2 gas, and deposition gas and applying DC voltage to the second electrode to form a protective film, the second step being performed after the first step; and a third step for introducing a third gas and etching the target film, the third step being performed after the step for forming the protective film.
Inventors:
OIKAWA SHO (JP)
ISHIDA WAKAKO (JP)
ISHIDA WAKAKO (JP)
Application Number:
PCT/JP2019/024947
Publication Date:
January 09, 2020
Filing Date:
June 24, 2019
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/3065; H05H1/46
Foreign References:
| JP2009076661A | 2009-04-09 | |||
| JPH1092935A | 1998-04-10 | |||
| JP2004335526A | 2004-11-25 | |||
| JP2004158538A | 2004-06-03 | |||
| JP2010506428A | 2010-02-25 | |||
| JP2010283213A | 2010-12-16 |
Attorney, Agent or Firm:
ITOH, Tadashige et al. (JP)
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