Title:
EVALUATION METHOD AND EVALUATION DEVICE OF EDGE SHAPE OF SILICON WAFER, SILICON WAFER, AND SELECTION METHOD AND MANUFACTURING METHOD THEREOF
Document Type and Number:
WIPO Patent Application WO/2019/035336
Kind Code:
A1
Abstract:
The present invention provides a method for evaluating the edge shape of a silicon wafer, the method comprising: when a radial reference L1, a radial reference L2, an intersection point P1, a height reference surface L3, h1 [μm], h2 [μm], a point Px3, a straight line Lx, an angle θx, a point Px0, δ [μm], a point Px1, and a radius Rx [μm] are defined as shape parameters in the wafer cross section, measuring the edge shape of the silicon wafer; setting the values of the shape parameters of h1, h2, and δ, and on the basis of the measurement data of the edge shape, calculating the shape parameters of Rx and θx according to the definition; and determining and evaluating the edge shape of the silicon wafer from the calculated Rx and θx. Thereby, there is provided a method for evaluating the edge shape of a silicon wafer, which can prevent in advance the occurrence of trouble such as the rupture of a formed film in a film forming process using, for example, a photoresist material.
Inventors:
SAKURADA MASAHIRO (JP)
KOBAYASHI MAKOTO (JP)
KOBAYASHI TAKESHI (JP)
KANAYA KOICHI (JP)
KOBAYASHI MAKOTO (JP)
KOBAYASHI TAKESHI (JP)
KANAYA KOICHI (JP)
Application Number:
PCT/JP2018/028167
Publication Date:
February 21, 2019
Filing Date:
July 27, 2018
Export Citation:
Assignee:
SHINETSU HANDOTAI KK (JP)
International Classes:
H01L21/66; G01B11/24; H01L21/304
Domestic Patent References:
| WO2008093488A1 | 2008-08-07 | |||
| WO2012147279A1 | 2012-11-01 |
Foreign References:
| JP2016203342A | 2016-12-08 | |||
| JP2009168634A | 2009-07-30 |
Other References:
See also references of EP 3671816A4
Attorney, Agent or Firm:
YOSHIMIYA Mikio et al. (JP)
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