Title:
EVALUATION METHOD FOR SEMICONDUCTOR WAFER AND METHOD FOR MANUFACTURING SEMICONDUCTOR WAFER
Document Type and Number:
WIPO Patent Application WO/2019/142662
Kind Code:
A1
Abstract:
Provided is an evaluation method for a semiconductor wafer that includes: acquiring a reflected image as a bright field image by receiving reflected light obtained by irradiating one surface side of a semiconductor wafer to be evaluated with light; acquiring a scattering image as a dark-field image by receiving scattered light obtained by shining light toward that surface side of the semiconductor wafer to be evaluated; and finding the distance L between the bright region observed in the reflected image and the bright region observed in the scattering image. The semiconductor wafer to be evaluated is a semiconductor wafer whereon is formed a chamfered surface at the peripheral edge part of the wafer. The evaluation method includes evaluating the shape of the boundary part between the main surface on the side of the semiconductor wafer to be evaluated that is irradiated by the light and the chamfered surface adjacent to this main surface on the basis of L above.
Inventors:
NAGASAWA TAKAHIRO (JP)
HASHIMOTO YASUYUKI (JP)
KATO HIROTAKA (JP)
HASHIMOTO YASUYUKI (JP)
KATO HIROTAKA (JP)
Application Number:
PCT/JP2019/000042
Publication Date:
July 25, 2019
Filing Date:
January 07, 2019
Export Citation:
Assignee:
SUMCO CORP (JP)
International Classes:
H01L21/66
Foreign References:
| JP2017526158A | 2017-09-07 | |||
| JP2015102364A | 2015-06-04 |
Attorney, Agent or Firm:
SIKS & CO. (JP)
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