Title:
EXPOSURE LIGHT SOURCE, MASK DESIGN METHOD AND PROGRAM
Document Type and Number:
WIPO Patent Application WO/2014/192518
Kind Code:
A1
Abstract:
Provided is a method of optimizing (designing) a light source and a mask pattern which can be used for different purposes as necessary, wherein the cooperative relation between OPC and SMO is fully realized. [Solution] This method of designing a exposure light source and a mask involves: a step (S1) for selecting a prescribed pattern group; a step (S2) for performing source mask optimization (SMO) using the prescribed pattern group, wherein the SMO is performed under OPC limiting rules which selectively limit shifting of the edge positions of polygons when applying optical proximity correction (OPC) to the prescribed pattern group; and a step (S3, S4) for using the light source optimized by SMO and applying OPC to the entire exposure mask pattern to determine a layout of the exposure mask.
Inventors:
INOUE TADANOBU (JP)
MELVILLE DAVID OZMOND (US)
ROSENBLUTH ALAN E (US)
SAKAMOTO MASAHARU (JP)
TIAN KEHAN (US)
MELVILLE DAVID OZMOND (US)
ROSENBLUTH ALAN E (US)
SAKAMOTO MASAHARU (JP)
TIAN KEHAN (US)
Application Number:
PCT/JP2014/062514
Publication Date:
December 04, 2014
Filing Date:
May 09, 2014
Export Citation:
Assignee:
IBM (US)
IBM JAPAN (JP)
IBM JAPAN (JP)
International Classes:
G03F1/36; G03F1/70; H01L21/027
Domestic Patent References:
| WO2014042044A1 | 2014-03-20 |
Foreign References:
| JP2013065018A | 2013-04-11 | |||
| JP2013509604A | 2013-03-14 | |||
| JP2003203849A | 2003-07-18 | |||
| JP2013165271A | 2013-08-22 |
Attorney, Agent or Firm:
UENO Takeshi et al. (JP)
Tsuyoshi Ueno (JP)
Tsuyoshi Ueno (JP)
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