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Title:
FePt SPUTTERING TARGET AND METHOD FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2013/105647
Kind Code:
A1
Abstract:
Provided are an FePt sputtering target with which it is possible to eliminate the use of multiple targets and use only a thin film comprising an FePt alloy that is suitable as a magnetic recording medium, and a method for producing the same. The target has a dispersed structure of an FePt alloy phase, which is formed from 40 to 60 at% of Pt, with Fe and inevitable impurities as the balance; a C phase comprising inevitable impurities; and a metal oxide phase comprising inevitable impurities. The C content of the entire target is greater than 0 vol% but 20 vol% or less; the metal oxide content of the entire target is 10 vol% or greater but less than 40 vol%; and the total content of C and metal oxide in the entire target is 20 to 40 vol%.

Inventors:
MIYASHITA TAKANOBU (JP)
GOTO YASUYUKI (JP)
YAMAMOTO TAKAMICHI (JP)
KUSHIBIKI RYOUSUKE (JP)
AONO MASAHIRO (JP)
NISHIURA MASAHIRO (JP)
Application Number:
PCT/JP2013/050429
Publication Date:
July 18, 2013
Filing Date:
January 11, 2013
Export Citation:
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Assignee:
TANAKA PRECIOUS METAL IND (JP)
International Classes:
C23C14/34; B22F9/08; C22C1/05; C22C5/04; C22C32/00; G11B5/851
Domestic Patent References:
WO2012029498A12012-03-08
WO2012086335A12012-06-28
WO2012086300A12012-06-28
Foreign References:
JP2003313659A2003-11-06
JP2011208167A2011-10-20
JP2006161082A2006-06-22
Attorney, Agent or Firm:
MATSUYAMA, Keisuke et al. (JP)
Keisuke Matsuyama (JP)
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Claims: