Title:
FERROELECTRIC MEMORY CELL, MEMORY, AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/197707
Kind Code:
A1
Abstract:
A ferroelectric memory cell, a memory, and an electronic device. An oxygen barrier layer (05) and an oxygen storage layer (04) are introduced on one side of a ferroelectric layer (03); the oxygen storage layer (04) is adjacent to the ferroelectric layer (03); the oxygen storage layer (04) comprises a conductive oxide; the oxygen barrier layer (05) comprises a conductive compound; and the electrical conductivity of the oxygen barrier layer (05) is greater than that of the oxygen storage layer (04). The conductive oxide can reduce the diffusion of oxygen atoms, and the number of oxygen vacancies in a device is controlled not to be excessive, so that the aggregation of oxygen vacancies on one side of an electrode at a high temperature is reduced, and the situation that a failure of the device is caused by the oxygen vacancies being communicated with a breakdown path is reduced. The conductive compound can form tight chemical bonds with diffused oxygen atoms, the oxygen atoms are prevented from continuing to diffuse deep into the electrode, the oxygen atoms are locked at an interface, and the number of the oxygen vacancies in the device is controlled not to be excessive, so that the aggregation of the oxygen vacancies on one side of the electrode at a high temperature is reduced, and the situation that a failure of the device caused by the oxygen vacancies being communicated with the breakdown path is reduced, thereby significantly improving the high-temperature resistance and endurance of the ferroelectric memory cell.
Inventors:
YU FANGZHOU (CN)
ZHANG HENG (CN)
ZHANG YU (CN)
SUN YIMING (CN)
LI YUE (CN)
LV HANGBING (CN)
XU JEFFREY JUNHAO (CN)
ZHANG HENG (CN)
ZHANG YU (CN)
SUN YIMING (CN)
LI YUE (CN)
LV HANGBING (CN)
XU JEFFREY JUNHAO (CN)
Application Number:
PCT/CN2023/071188
Publication Date:
October 19, 2023
Filing Date:
January 09, 2023
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H01L29/51
Domestic Patent References:
| WO2021112247A1 | 2021-06-10 |
Foreign References:
| CN102683583A | 2012-09-19 | |||
| US20190088664A1 | 2019-03-21 | |||
| US20190019802A1 | 2019-01-17 | |||
| US20210202508A1 | 2021-07-01 |
Attorney, Agent or Firm:
TDIP & PARTNERS (CN)
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