FIELD-EFFECT TRANSISTOR, MEMORY AND ELECTRONIC DEVICE

WIPO Patent Application WO/2023/197706

A1

Provided in the present application are a field-effect transistor, a memory and an electronic device. The field-effect transistor comprises a laminated structure, a channel layer, a gate oxide layer and a gate electrode, wherein the laminated structure comprises a source electrode, a first isolation dielectric layer and a drain electrode, which are sequentially arranged in a stacked manner, and the laminated structure has a through groove, which penetrates same from an upper surface of the drain electrode to the source electrode; and the channel layer covers side walls and the bottom of the through groove, the gate oxide layer covers side walls and the bottom of the channel layer, and the gate electrode covers side walls of the gate oxide layer. Compared with a planar field-effect transistor, the field-effect transistor is equivalent to spatially rotating two planar field-effect transistors to make channel layers thereof vertical, short-circuiting source electrodes of the two transistors which have the vertical channel layers, and connecting the channel layers thereof to one another. Since the channel layers are vertically distributed, the horizontal projection area of the field-effect transistor can be reduced compared with a planar field-effect transistor.

HUANG KAILIANG (CN)
JING WEILIANG (CN)
YIN SHIHUI (CN)
FENG JUNXIAO (CN)
WANG ZHENGBO (CN)

PCT/CN2023/071187

October 19, 2023

January 09, 2023

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HUAWEI TECH CO LTD (CN)

H01L29/786

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CN102254948A	2011-11-23
CN103151391A	2013-06-12
CN111370485A	2020-07-03
US20160020306A1	2016-01-21

TDIP & PARTNERS (CN)

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