FERROELECTRIC MEMORY AND FORMATION METHOD THEREFOR, AND ELECTRONIC DEVICE

Title:

FERROELECTRIC MEMORY AND FORMATION METHOD THEREFOR, AND ELECTRONIC DEVICE

Document Type and Number:

WIPO Patent Application WO/2023/024100

Kind Code:

A1

Abstract:

Provided in the embodiments of the present application are a ferroelectric memory and a formation method therefor, and an electronic device. The ferroelectric memory is mainly configured to suppress the influence of electrode layers, which are located on two sides of a ferroelectric layer, on the crystal phase orientation of the ferroelectric layer. The ferroelectric memory comprises: a substrate and a plurality of memory units, which are formed on the substrate, wherein each memory unit comprises a ferroelectric capacitor; the ferroelectric capacitor comprises a first electrode and a second electrode, and a ferroelectric layer, which is formed between the first electrode and the second electrode; the ferroelectric capacitor further comprises a first buffer layer, which is formed between the first electrode and the ferroelectric layer, and a second buffer layer, which is formed between the second electrode and the ferroelectric layer; and the first buffer layer and the second buffer layer suppress the influence of the corresponding electrodes on the crystal phase orientation of the ferroelectric layer by means of an amorphous structure and/or an orthogonal crystal phase structure, namely, the first buffer layer and the second buffer layer cause the ferroelectric layer to be in an orthogonal crystal phase. That is, the first buffer layer and the second buffer layer are used as a growth template for the ferroelectric layer to prevent the influence of the electrodes on the crystal phase orientation of the ferroelectric layer.

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Inventors:

TAN WANLIANG (CN)
LI YUXING (CN)
LI WEIGU (CN)
CAI JIALIN (CN)
LV HANGBING (CN)
XU JEFFREY JUNHAO (CN)

Application Number:

PCT/CN2021/115133

Publication Date:

March 02, 2023

Filing Date:

August 27, 2021

Export Citation:

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Assignee:

HUAWEI TECH CO LTD (CN)

International Classes:

H01L27/11507

Domestic Patent References:

WO2002009191A2

2002-01-31

Foreign References:

CN113130498A	2021-07-16
CN112510048A	2021-03-16
CN112133700A	2020-12-25
CN112164699A	2021-01-01
JP2007115733A	2007-05-10

Attorney, Agent or Firm:

BEIJING ZBSD PATENT&TRADEMARK AGENT LTD. (CN)

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