Title:
FERROELECTRIC MEMORY AND MANUFACTURING METHOD FOR FERROELECTRIC MEMORY
Document Type and Number:
WIPO Patent Application WO/2023/241295
Kind Code:
A1
Abstract:
Disclosed in the embodiments of the present application are a ferroelectric memory and a manufacturing method for a ferroelectric memory. The ferroelectric memory comprises a storage array, the storage array comprises X rows * Y columns of storage structures, and each storage structure comprises Z storage units, which are sequentially stacked. X, Y and Z are integers greater than 1. Each storage unit comprises a plurality of sequentially stacked ferroelectric capacitors and one transistor. The transistors of the Z storage units of each storage structure share one source electrode or drain electrode. The shared source electrode or drain electrode in each storage structure penetrates the corresponding storage structure in the stacking direction of the Z storage units. Each storage structure comprises Z gate electrodes. By means of the embodiments of the present application, a low-cost and large-capacity memory can be realized.
Inventors:
YIN SHIHUI (CN)
JING WEILIANG (CN)
WANG ZHAOGUI (CN)
WANG ZHENGBO (CN)
LIAO HENG (CN)
JING WEILIANG (CN)
WANG ZHAOGUI (CN)
WANG ZHENGBO (CN)
LIAO HENG (CN)
Application Number:
PCT/CN2023/094795
Publication Date:
December 21, 2023
Filing Date:
May 17, 2023
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H10B53/30; G11C11/22; H10B53/20
Domestic Patent References:
| WO2022094814A1 | 2022-05-12 |
Foreign References:
| CN114446968A | 2022-05-06 | |||
| CN114649019A | 2022-06-21 | |||
| CN1466763A | 2004-01-07 | |||
| CN1343008A | 2002-04-03 | |||
| CN110970066A | 2020-04-07 |
Attorney, Agent or Firm:
SCIHEAD IP LAW FIRM (CN)
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