Title:
FIELD EFFECT TRANSISTOR DEVICE, AND METHOD FOR ALLEVIATING SHORT CHANNEL EFFECT AND OUTPUT CHARACTERISTIC THEREOF
Document Type and Number:
WIPO Patent Application WO/2022/160923
Kind Code:
A1
Abstract:
Provided are a field effect transistor device, and a method for alleviating a short channel effect and an output characteristic by using same. The field effect transistor device comprises an active layer, wherein the active layer comprises a source electrode region, a drain electrode region and a channel region, which is located between the source electrode region and the drain electrode region. When the device is turned on, an effective channel and an equivalent source electrode and/or an equivalent drain electrode that is away from the effective channel are formed in the channel region. In the field effect transistor device, the source electrode region is connected to the drain electrode region by means of the effective channel and the equivalent source electrode and/or the equivalent drain electrode, so as to form a working current.
Inventors:
WANG MINGXIANG (CN)
CHEN LEKAI (CN)
ZHANG DONGLI (CN)
WANG HUAISHENG (CN)
CHEN LEKAI (CN)
ZHANG DONGLI (CN)
WANG HUAISHENG (CN)
Application Number:
PCT/CN2021/134782
Publication Date:
August 04, 2022
Filing Date:
December 01, 2021
Export Citation:
Assignee:
UNIV SOOCHOW (CN)
International Classes:
H01L29/08
Foreign References:
| US6348387B1 | 2002-02-19 | |||
| CN103985635A | 2014-08-13 | |||
| CN110010681A | 2019-07-12 | |||
| CN103730514A | 2014-04-16 |
Attorney, Agent or Firm:
SUZHOU 3IN INTELLECTUAL PROPERTY AGENT CO., LTD. (CN)
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