Title:
FIELD EFFECT TRANSISTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/029258
Kind Code:
A1
Abstract:
Disclosed is a field effect transistor device, which is used to solve the problem of the short-channel effect of field effect transistors in the prior art. The field effect transistor device comprises: an active layer, which comprises a source region, a drain region, and a channel region located between the source region and the drain region; a gate, which is arranged around the channel region; and a gate insulating layer, which is arranged between the gate and the channel region. When the device is turned on, an effective channel and an equivalent source and/or equivalent drain distant from the effective channel are formed in the channel region, and the field effect transistor device connects the source region and the drain region by means of the effective channel, as well as the equivalent source and/or equivalent drain so as to form a working current.
Inventors:
WANG MINGXIANG (CN)
CHEN LEKAI (CN)
ZHANG DONGLI (CN)
WANG HUAISHENG (CN)
CHEN LEKAI (CN)
ZHANG DONGLI (CN)
WANG HUAISHENG (CN)
Application Number:
PCT/CN2021/134781
Publication Date:
March 09, 2023
Filing Date:
December 01, 2021
Export Citation:
Assignee:
UNIV SOOCHOW (CN)
International Classes:
H01L29/10
Foreign References:
| CN101710585A | 2010-05-19 | |||
| CN112582471A | 2021-03-30 | |||
| CN101675502A | 2010-03-17 | |||
| US20020093052A1 | 2002-07-18 | |||
| CN104854685A | 2015-08-19 | |||
| CN101064343A | 2007-10-31 | |||
| JPH06151835A | 1994-05-31 |
Attorney, Agent or Firm:
SUZHOU 3IN INTELLECTUAL PROPERTY AGENT CO., LTD. (CN)
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