Title:
FIELD-EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2022/165817
Kind Code:
A1
Abstract:
Embodiments of the present application provide a field-effect transistor and a manufacturing method therefor. The field-effect transistor comprises: a substrate, provided with a source and a drain, a carrier transport channel being formed between the source and the drain, wherein the carrier transport channel forms, at the surface of the substrate, a channel surface having at least one trench; a gate dielectric layer, overlying the channel surface having at least one trench; and a gate, provided on the gate dielectric layer, wherein the gate and the gate dielectric layer are surrounded by a gate sidewall, an extension range of the at least one trench exceeds a coverage area of the gate, and the extension range of the at least one trench does not exceed a coverage region of the gate sidewall. In the solution of the embodiments of the present invention, a device layout area of the field-effect transistor is reduced while device characteristic requirements are ensured.
Inventors:
YUAN XIAOLONG (CN)
SHEN JIAN (CN)
YAO GUOFENG (CN)
LIU YUPING (CN)
SHEN JIAN (CN)
YAO GUOFENG (CN)
LIU YUPING (CN)
Application Number:
PCT/CN2021/075884
Publication Date:
August 11, 2022
Filing Date:
February 07, 2021
Export Citation:
Assignee:
SHENZHEN GOODIX TECH CO LTD (CN)
International Classes:
H01L29/772; H01L21/336; H01L29/78
Foreign References:
| KR20020081795A | 2002-10-30 | |||
| KR100307541B1 | 2001-11-02 | |||
| US20050127433A1 | 2005-06-16 | |||
| JPS6482672A | 1989-03-28 | |||
| CN105097916A | 2015-11-25 | |||
| CN112071758A | 2020-12-11 |
Attorney, Agent or Firm:
BEIJING HEADSTAY INTELLECTUAL PROPERTY AGENCY (CN)
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