FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING SAME

WIPO Patent Application WO/2020/116147

A1

In the present invention, a buffer layer (102), an etch-stop layer (103), and a channel layer (104) are epitaxially grown, in this order, on a substrate (101). The substrate (101) is constituted, for example, by InP made to have high resistance by doping with Fe. The buffer layer (102) is constituted by a compound semiconductor lattice-matched to the InP. The etch-stop layer (103) is constituted by InxAl1-xP (0≤x≤0.75). The channel layer (104) is constituted by InyGa1-yAs(0