Title:
FIELD EMISSION ELEMENT AND METHOD FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2023/105899
Kind Code:
A1
Abstract:
The present disclosure provides a field emission element 10 which is provided with: an emitter 12 that is formed on a substrate 11 and has an acute tip 12a; and a gate electrode 15 that is formed on the substrate, with insulating layers 13, 14 being interposed therebetween, and has an opening 15a from which the tip of the emitter is exposed. With respect to this field emission element 10, the gate electrode is formed of a polycrystalline multilayer graphene film. A method for producing a field emission element is also disclosed.
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Inventors:
NAGAO MASAYOSHI (JP)
MURATA HIROMASA (JP)
MURAKAMI KATSUHISA (JP)
MURATA HIROMASA (JP)
MURAKAMI KATSUHISA (JP)
Application Number:
PCT/JP2022/037103
Publication Date:
June 15, 2023
Filing Date:
October 04, 2022
Export Citation:
Assignee:
AIST (JP)
International Classes:
H01J9/02; H01J1/304
Foreign References:
| JP6635510B2 | 2020-01-29 | |||
| US20170084417A1 | 2017-03-23 | |||
| US20180158640A1 | 2018-06-07 | |||
| US20160148774A1 | 2016-05-26 | |||
| US20150060757A1 | 2015-03-05 | |||
| JP2018035010A | 2018-03-08 | |||
| JP2010055907A | 2010-03-11 |
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