Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
FILM FORMING DEVICE AND FILM FORMING METHOD USING SAME
Document Type and Number:
WIPO Patent Application WO/2022/220015
Kind Code:
A1
Abstract:
The present invention comprises: a film forming chamber (2a) in which at least a vapor deposition material (M) and a vapor deposition-receiving object (S) are provided; exhaust devices (3, 4) that depressurize the entire interior of the film forming chamber; a gas supply device (8) that supplies a gas which will not react with the formed film to a first region (R1) including the vapor deposition-receiving object; a shutoff member (7) that suppresses the flow of the gas supplied from the gas supply device toward a second region (R2) including the vapor deposition material; and a control device (10) that causes the vaporized vapor deposition material to form a film on the vapor deposition-receiving object.

Inventors:
MATSUDAIRA TAKAYUKI (JP)
MASUKAWA TAKASHIGE (JP)
OHTAKI YOSHIYUKI (JP)
SHIMIZU TADAYUKI (JP)
MIYAUCHI MITSUHIRO (JP)
MUROTANI HIROSHI (JP)
Application Number:
PCT/JP2022/012607
Publication Date:
October 20, 2022
Filing Date:
March 18, 2022
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
SHINCRON CO LTD (JP)
TOKAI UNIV EDUCATIONAL SYSTEM (JP)
International Classes:
C23C14/24
Domestic Patent References:
WO2018143206A12018-08-09
WO2015097898A12015-07-02
WO2010073517A12010-07-01
WO2021075385A12021-04-22
Foreign References:
JPH08316083A1996-11-29
JPH0963055A1997-03-07
Attorney, Agent or Firm:
TOKOSHIE PATENT FIRM (JP)
Download PDF: