Title:
FILM FORMING DEVICE AND FILM FORMING METHOD USING SAME
Document Type and Number:
WIPO Patent Application WO/2022/220015
Kind Code:
A1
Abstract:
The present invention comprises: a film forming chamber (2a) in which at least a vapor deposition material (M) and a vapor deposition-receiving object (S) are provided; exhaust devices (3, 4) that depressurize the entire interior of the film forming chamber; a gas supply device (8) that supplies a gas which will not react with the formed film to a first region (R1) including the vapor deposition-receiving object; a shutoff member (7) that suppresses the flow of the gas supplied from the gas supply device toward a second region (R2) including the vapor deposition material; and a control device (10) that causes the vaporized vapor deposition material to form a film on the vapor deposition-receiving object.
Inventors:
MATSUDAIRA TAKAYUKI (JP)
MASUKAWA TAKASHIGE (JP)
OHTAKI YOSHIYUKI (JP)
SHIMIZU TADAYUKI (JP)
MIYAUCHI MITSUHIRO (JP)
MUROTANI HIROSHI (JP)
MASUKAWA TAKASHIGE (JP)
OHTAKI YOSHIYUKI (JP)
SHIMIZU TADAYUKI (JP)
MIYAUCHI MITSUHIRO (JP)
MUROTANI HIROSHI (JP)
Application Number:
PCT/JP2022/012607
Publication Date:
October 20, 2022
Filing Date:
March 18, 2022
Export Citation:
Assignee:
SHINCRON CO LTD (JP)
TOKAI UNIV EDUCATIONAL SYSTEM (JP)
TOKAI UNIV EDUCATIONAL SYSTEM (JP)
International Classes:
C23C14/24
Domestic Patent References:
WO2018143206A1 | 2018-08-09 | |||
WO2015097898A1 | 2015-07-02 | |||
WO2010073517A1 | 2010-07-01 | |||
WO2021075385A1 | 2021-04-22 |
Foreign References:
JPH08316083A | 1996-11-29 | |||
JPH0963055A | 1997-03-07 |
Attorney, Agent or Firm:
TOKOSHIE PATENT FIRM (JP)
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