Title:
FILM-FORMING METHOD AND SPUTTERING APPARATUS
Document Type and Number:
WIPO Patent Application WO/2017/203844
Kind Code:
A1
Abstract:
Provided are a film-forming method and sputtering apparatus with which it is possible to reduce the amount of variation in film thickness as much as possible even when forming films continuously on multiple workpieces. This film-forming method, which disposes a workpiece W and a target 31 inside a vacuum chamber 1, introduces a sputtering gas into the vacuum chamber, applies electric power on the target and sputters the target to form a film on the workpiece surface: faces the sputter surface 31a of the target that is to be sputtered downward; causes a leakage magnetic field to act locally below the sputter surface by means of a magnet unit 4 provided above the target; rotates the magnet unit so as to vary the leakage magnetic field action region continuously on the sputter surface during sputtering film formation; and comprises a step for switching the magnet unit rotation direction alternately between the forward direction and the reverse direction according to the amount of integrated electric power applied on the target.
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Inventors:
NAKAMURA SHINYA (JP)
HENMI MITSUNORI (JP)
FUJII YOSHINORI (JP)
HENMI MITSUNORI (JP)
FUJII YOSHINORI (JP)
Application Number:
PCT/JP2017/014041
Publication Date:
November 30, 2017
Filing Date:
April 04, 2017
Export Citation:
Assignee:
ULVAC INC (JP)
International Classes:
C23C14/35
Domestic Patent References:
| WO2007046243A1 | 2007-04-26 |
Foreign References:
| US20130156936A1 | 2013-06-20 | |||
| JP2010255011A | 2010-11-11 |
Attorney, Agent or Firm:
SEIGA PATENT AND TRADEMARK CORPORATION (JP)
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