Title:
FIN-TYPE FIELD EFFECT TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2024/024307
Kind Code:
A1
Abstract:
Provided is a fin-type field effect transistor 1 comprising: a semiconductor layer 10 made of a gallium oxide based semiconductor and having a plurality of fins 120; a gate electrode 14 formed on the side surface of each of the plurality of fins 120 with a gate insulating film 13 interposed therebetween; a source electrode 15 connected to the semiconductor layer 10 on the side of the plurality of fins 120; and a drain electrode 16 connected to the semiconductor layer 10 on the side opposite to that of the plurality of fins 120, wherein an outermost fin 120b of the plurality of fins 120 is a dummy fin to which the source electrode 15 is not electrically connected.
Inventors:
WAKIMOTO DAIKI (JP)
MIYAMOTO HIRONOBU (JP)
MIYAMOTO HIRONOBU (JP)
Application Number:
PCT/JP2023/021931
Publication Date:
February 01, 2024
Filing Date:
June 13, 2023
Export Citation:
Assignee:
NOVEL CRYSTAL TECH INC (JP)
International Classes:
H01L29/78; H01L21/336; H01L29/12; H01L29/24; H01L29/786
Foreign References:
| JP2020036041A | 2020-03-05 | |||
| JP2005116969A | 2005-04-28 | |||
| JP2022023829A | 2022-02-08 | |||
| JP2017069419A | 2017-04-06 | |||
| JPH09275212A | 1997-10-21 | |||
| JP2010267677A | 2010-11-25 |
Other References:
LI W.; NOMOTO K.; HU Z.; NAKAMURA T.; JENA D.; XING H. G.: "Single and multi-fin normally-off Ga2O3 vertical transistors with a breakdown voltage over 2.6 kV", 2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), IEEE, 7 December 2019 (2019-12-07), XP033714446, DOI: 10.1109/IEDM19573.2019.8993526
Attorney, Agent or Firm:
HIRATA & PARTNERS (JP)
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