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Title:
FLEXIBLE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2012/127779
Kind Code:
A1
Abstract:
This method for producing a flexible semiconductor device is characterized by comprising: (i) a step for forming an insulating layer on one of the main surfaces of a metal foil; (ii) a step for forming a semiconductor layer on the insulating layer, and for forming a source electrode and a drain electrode in so as to come into contact with the semiconductor layer; (iii) a step for forming a flexible film layer in such a manner as to cover the semiconductor layer, the source electrode and the drain electrode; (iv) a step for forming vias in the flexible film layer, thereby obtaining a semiconductor device precursor; and (v) a step for processing the metal foil to form a gate electrode from the metal foil. This method for producing a flexible semiconductor device is further characterized in that, when the metal foil is processed in step (v), a gate electrode is formed in a prescribed position by using at least one of the vias of the semiconductor device precursor as a positioning marker.

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Inventors:
SUZUKI TAKESHI
HIRANO KOICHI
MASUDA SHINOBU
Application Number:
PCT/JP2012/001151
Publication Date:
September 27, 2012
Filing Date:
February 21, 2012
Export Citation:
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Assignee:
PANASONIC CORP (JP)
SUZUKI TAKESHI
HIRANO KOICHI
MASUDA SHINOBU
International Classes:
H01L21/336; G09F9/00; G09F9/30; H01L21/3213; H01L21/768; H01L23/522; H01L27/32; H01L29/786
Foreign References:
JPH07302881A1995-11-14
JP2010238873A2010-10-21
JP2010145772A2010-07-01
JP2005236186A2005-09-02
JP2000305109A2000-11-02
Attorney, Agent or Firm:
SAMEJIMA, Mutsumi et al. (JP)
Mutsumi Sameshima (JP)
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