Title:
NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT
Document Type and Number:
WIPO Patent Application WO/2012/127778
Kind Code:
A1
Abstract:
Provided is a nitride semiconductor light-emitting element, which has an optical waveguide (120) and comprises, in succession, at least a bottom ground layer (102), an active layer (104), and a top ground layer (107). The top ground layer (107) has a second top ground layer (109) that is formed from a transparent conductor and a first top ground layer (108) that is formed from a nitride semiconductor on the active layer side rather than the second top ground layer (109) side of the top ground layer.
Inventors:
KASUGAI HIDEKI
ORITA KENJI
OHNO HIROSHI
YAMANAKA KAZUHIKO
ORITA KENJI
OHNO HIROSHI
YAMANAKA KAZUHIKO
Application Number:
PCT/JP2012/001144
Publication Date:
September 27, 2012
Filing Date:
February 21, 2012
Export Citation:
Assignee:
PANASONIC CORP (JP)
KASUGAI HIDEKI
ORITA KENJI
OHNO HIROSHI
YAMANAKA KAZUHIKO
KASUGAI HIDEKI
ORITA KENJI
OHNO HIROSHI
YAMANAKA KAZUHIKO
International Classes:
H01S5/343; H01S5/22
Foreign References:
| JP2010016261A | 2010-01-21 | |||
| JP2006041491A | 2006-02-09 | |||
| JPH0974249A | 1997-03-18 | |||
| JP2007129236A | 2007-05-24 | |||
| JP2004289157A | 2004-10-14 |
Attorney, Agent or Firm:
NII, Hiromori (JP)
New house Extensive 守 (JP)
New house Extensive 守 (JP)
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