Title:
FLOW CHANNEL STRUCTURE AND SEMICONDUCTOR MANUFACTURING DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/190785
Kind Code:
A1
Abstract:
This flow channel structure comprises: a substrate; a flow channel; a plurality of openings; a first metal wiring; and a second metal wiring. The substrate has a first surface, and is made of ceramic. The flow channel has a plurality of branch paths, and is located inside the substrate. The openings are located on the first surface, and respectively connected to the branch paths. The first metal wiring is at least partially located inside the substrate, and is made of a first metal. The second metal wiring is at least partially located inside the substrate, and is made of a second metal different from the first metal. The first and second metal wirings are connected inside the substrate, and form a thermoelectric coupling part having a thermoelectric coupling function. Further, the substrate has a plurality of the thermoelectric coupling parts.
Inventors:
HAMADA MIKI (JP)
WATANABE DAIKI (JP)
OGAWA YUYA (JP)
WATANABE DAIKI (JP)
OGAWA YUYA (JP)
Application Number:
PCT/JP2023/013013
Publication Date:
October 05, 2023
Filing Date:
March 29, 2023
Export Citation:
Assignee:
KYOCERA CORP (JP)
International Classes:
H01L21/02; C23C16/44; G01K7/02; H01L21/3065; H01L21/31; H01L21/683
Foreign References:
| US20190040529A1 | 2019-02-07 | |||
| JP2021176192A | 2021-11-04 | |||
| JP2017211271A | 2017-11-30 | |||
| JP2002327274A | 2002-11-15 | |||
| JP2019220593A | 2019-12-26 |
Attorney, Agent or Firm:
SAKAI INTERNATIONAL PATENT OFFICE (JP)
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