Title:
FLOW PATH STRUCTURE AND SEMICONDUCTOR MANUFACTURING DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/190786
Kind Code:
A1
Abstract:
This flow path structure is provided with a substrate, a flow path, a plurality of openings, a first metal wire, and a second metal wire. The substrate has a first surface and is composed of ceramics. The flow path is positioned inside the substrate and includes a plurality of branch paths. The plurality of openings are positioned on the first surface and are respectively coupled with the plurality of branch paths. The first metal wire is at least partly positioned inside the substrate, and is composed of a first metal. The second metal wire is at least partly positioned inside the substrate, and is composed of a second metal different from the first metal. Further, the first metal wire and the second metal wire are connected inside the substrate, and form a thermocouple portion having a thermocouple function. In a frontal view of the first surface, the first metal wire and the second metal wire surround the periphery of the openings, and the thermocouple portion is positioned around the openings.
Inventors:
HAMADA MIKI (JP)
WATANABE DAIKI (JP)
OGAWA YUYA (JP)
WATANABE DAIKI (JP)
OGAWA YUYA (JP)
Application Number:
PCT/JP2023/013014
Publication Date:
October 05, 2023
Filing Date:
March 29, 2023
Export Citation:
Assignee:
KYOCERA CORP (JP)
International Classes:
H01L21/02; C23C16/44; G01K7/02; H01L21/3065; H01L21/31; H01L21/683
Foreign References:
| US20190040529A1 | 2019-02-07 | |||
| JP2021176192A | 2021-11-04 | |||
| JP2002327274A | 2002-11-15 | |||
| JP2019220593A | 2019-12-26 |
Attorney, Agent or Firm:
SAKAI INTERNATIONAL PATENT OFFICE (JP)
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