FUNCTIONAL DEVICE AND FABRICATION METHOD THEREFOR

WIPO Patent Application WO/2020/133059

A1

A fabrication method for a functional device and the functional device. The method comprises: providing a base substrate (110) (S110); forming a first amorphous semiconductor layer (130) (S120); depositing a first insulating layer (140) on the first amorphous semiconductor layer (130) (S130); forming a first opening (141) on the first insulating layer (140) so that the first amorphous semiconductor layer (130) is partially exposed (S140); depositing a metal catalytic layer (160), wherein the metal catalytic layer (160) is deposited into the first opening (141) and is in contact with the first amorphous semiconductor layer (130) (S150); performing an annealing and crystallization treatment so that the first amorphous semiconductor layer (130) is crystallized into a first polycrystalline semiconductor layer (230) by means of metal catalysis (S160); treating the metal catalytic layer (160) so as to form a functional metal layer (161) (S170); and preparing other film layers so as to form a functional device (S180). The described method has the advantages of simplifying the fabrication process, reducing steps and reducing costs.

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YU ERIC (CN)

PCT/CN2018/124342

July 02, 2020

December 27, 2018

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SHENZHEN ROYOLE TECHNOLOGIES CO LTD (CN)

H01L29/786

CN1431711A	2003-07-23
US20040110329A1	2004-06-10
CN101041413A	2007-09-26
CN105990138A	2016-10-05
US20050110022A1	2005-05-26

SCIHEAD IP LAW FIRM (CN)

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