Title:
GAAS WAFER, GAAS WAFER GROUP, AND METHOD FOR PRODUCING GAAS INGOT
Document Type and Number:
WIPO Patent Application WO/2023/054202
Kind Code:
A1
Abstract:
Provided is a GaAs wafer which has a reduced carrier concentration and a low dislocation density, and in which the ratio of the area of regions having a zero dislocation density relative to the area of the GaAs wafer is high. This GaAs wafer is characterized by having a silicon concentration of not less than 1.0×1017 cm-3 and less than 1.1×1018 cm-3, an indium concentration of not less than 3.0×1018 cm-3 and less than 3.0×1019 cm-3, and a boron concentration of not less than 2.5×1018 cm-3, and in that the carrier concentration is 1.0×1016 cm-3-4.0×1017 cm-3 inclusive and that the ratio of the area of regions having a zero dislocation density relative to the area of the wafer is not less than 91.0%.
Inventors:
SUNACHI NAOYA (JP)
TOBA RYUICHI (JP)
AKAISHI AKIRA (JP)
TOBA RYUICHI (JP)
AKAISHI AKIRA (JP)
Application Number:
PCT/JP2022/035510
Publication Date:
April 06, 2023
Filing Date:
September 22, 2022
Export Citation:
Assignee:
DOWA ELECTRONICS MATERIALS CO (JP)
International Classes:
C30B29/42; C30B29/40
Domestic Patent References:
| WO2021251349A1 | 2021-12-16 |
Foreign References:
| JP2003206200A | 2003-07-22 | |||
| JPS649898A | 1989-01-13 | |||
| JP2012246156A | 2012-12-13 |
Other References:
REFRACTIVE INDEX OF GAAS_JOURNAL OF APPLIED PHYSICS, 1964
Attorney, Agent or Firm:
SUGIMURA Kenji (JP)
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