Title:
GALLATE SINGLE CRYSTAL, PROCESS FOR PRODUCING THE SAME, PIEZOELECTRIC DEVICE FOR HIGH-TEMPERATURE USE AND PIEZOELECTRIC SENSOR FOR HIGH-TEMPERATURE USE
Document Type and Number:
WIPO Patent Application WO/2006/106875
Kind Code:
A1
Abstract:
A material for high-temperature region piezoelectric device that can be used at a high temperature zone exceeding 400&ring C, having a resistivity whose temperature dependence is slight. The material is characterized by having a composition selected from the group consisting of RE3Ga5-xAlxSiO14 (wherein RE represents a rare earth, and 03Ta0.5Ga5.5-xAlxO14 (wherein RE represents a rare earth, and 03Nb0.5Ga5.5-xAlxO14 (wherein RE represents a rare earth, and 04. The process for producing the same is characterized by growing a single crystal from a solution in an atmosphere of inert gas containing an oxidative gas and thereafter cooling the single crystal in an inert gas whose oxidative gas molar fraction (z) is lower than in the above growing step.
Inventors:
FUKUDA TSUGUO (JP)
YOSHIKAWA AKIRA (JP)
SATO HIROKI (JP)
YOSHIKAWA AKIRA (JP)
SATO HIROKI (JP)
Application Number:
PCT/JP2006/306744
Publication Date:
October 12, 2006
Filing Date:
March 30, 2006
Export Citation:
Assignee:
FUKUDA CRYSTAL LAB (JP)
FUKUDA TSUGUO (JP)
YOSHIKAWA AKIRA (JP)
SATO HIROKI (JP)
FUKUDA TSUGUO (JP)
YOSHIKAWA AKIRA (JP)
SATO HIROKI (JP)
International Classes:
H01L41/18; C30B29/34; H01L41/22
Foreign References:
| JPH1054773A | 1998-02-24 | |||
| JPH03199198A | 1991-08-30 | |||
| JPH07206577A | 1995-08-08 |
Other References:
KUMATORIYA M. ET AL.: "Crystal growth and electrochemical properties of Al substituted langasite (La3Ga5-xAlxSiO14)", JOURNAL OF CRYSTAL GROWTH, vol. 229, no. 1-4, July 2001 (2001-07-01), pages 289 - 293, XP004251074
See also references of EP 1867761A4
See also references of EP 1867761A4
Attorney, Agent or Firm:
Fukumori, Hisao (5-11 Kudanminami 4-chome, Chiyoda-ku Tokyo, JP)
Download PDF: