GALLIUM NITRIDE-BASED POLARITY INVERSION TYPE WAVELENGTH-DISTINGUISHABLE PHOTODETECTOR AND MANUFACTURING METHOD THEREFOR

WIPO Patent Application WO/2022/099850

A1

A gallium nitride (GaN)-based polarity inversion type wavelength-distinguishable photodetector. The photodetector comprises a photoelectrode; the photoelectrode comprises a substrate, and further comprises a heterojunction nanostructure based on a GaN material formed on the surface of the substrate. The heterojunction nanostructure is perpendicular to the substrate. Also provided is a manufacturing method for a photoelectrochemical photodetector based on the GaN-based material. In the photoelectrochemical photodetector based on the GaN-based heterojunction nanostructure, the response current is a positive current under illumination of a specific wavelength, and the response current is a negative current under illumination of other wavelengths other than the specific wavelength (i.e., the polarities of photocurrents generated by illumination of different wavelengths are different), thereby avoiding intrinsic defects of traditional photodetectors from the working principle, and realizing detection, distinguishing and light intensity measurement of optical signals of different wavelengths.

JP6745445	Optical observation system and optical observation method
JP2000221275	CONTROLLER OF AIR CONDITIONER

SUN HAIDING (CN)
WANG DANHAO (CN)
KANG YANG (CN)
LIU XIN (CN)

PCT/CN2020/136465

May 19, 2022

December 15, 2020

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UNIV SCIENCE & TECHNOLOGY CHINA (CN)

G01J1/42; H01G9/20

US20130240837A1	2013-09-19
CN109103282A	2018-12-28
CN1371133A	2002-09-25
CN106653893A	2017-05-10
US20060163681A1	2006-07-27
US20100171025A1	2010-07-08

CHINA SCIENCE PATENT & TRADEMARK AGENT LTD. (CN)

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